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參數(shù)資料
| 型號： | LBSS138LT1G |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Power MOSFET 200 mAmps, 50 Volts N-hannel SOT-3 |
| 中文描述： | 功率MOSFET 200 mAmps，50伏特蘼漢耐爾的SOT - 3 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 168K |
| 代理商： | LBSS138LT1G |
LESHAN RADIO COMPANY, LTD.
LBSS138LT1
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250
μ
Adc)
V
(BR)DSS
50
–
–
Vdc
Zero Gate Voltage Drain Current
(V
DS
= 25 Vdc, V
GS
= 0 Vdc)
(V
DS
= 50 Vdc, V
GS
= 0 Vdc)
I
DSS
–
–
–
–
0.1
0.5
μ
Adc
Gate–Source Leakage Current (V
GS
=
±
20 Vdc, V
DS
= 0 Vdc)
I
GSS
–
–
±
0.1
μ
Adc
ON CHARACTERISTICS
(Note 1.)
Gate–Source Threshold Voltage
(V
DS
= V
GS
, I
D
= 1.0 mAdc)
V
GS(th)
0.5
–
Vdc
Static Drain–to–Source On–Resistance
(V
GS
= 2.75 Vdc, I
D
< 200 mAdc, T
A
= –40
°
C to +85
°
C)
(V
GS
= 5.0 Vdc, I
D
= 200 mAdc)
r
DS(on)
–
–
5.6
–
10
3.5
Ohms
Forward Transconductance
(V
DS
= 25 Vdc, I
D
= 200 mAdc, f = 1.0 kHz)
g
fs
100
–
–
mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1 MHz)
(V
DS
= 25 Vdc, V
GS
= 0, f = 1 MHz)
C
iss
C
oss
–
40
50
pF
Output Capacitance
–
12
25
Transfer Capacitance
(V
DG
= 25 Vdc, V
GS
= 0, f = 1 MHz)
C
rss
–
3.5
5.0
SWITCHING CHARACTERISTICS
(Note 2.)
Turn–On Delay Time
(V
DD
= 30 Vdc, I
D
= 0.2 Adc,)
t
d(on)
–
–
20
ns
Turn–Off Delay Time
1. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
2. Switching characteristics are independent of operating junction temperature.
t
d(off)
–
–
20
LBSS138LT1
-
2/5
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