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參數(shù)資料
| 型號(hào)： | LBSS138LT1G |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Power MOSFET 200 mAmps, 50 Volts N-hannel SOT-3 |
| 中文描述： | 功率MOSFET 200 mAmps，50伏特蘼漢耐爾的SOT - 3 |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 168K |
| 代理商： | LBSS138LT1G |
LESHAN RADIO COMPANY, LTD.
LBSS138LT1
-
3/5
LBSS138LT1
TYPICAL ELECTRICAL CHARACTERISTICS
R
(
Figure 1. On–Region Characteristics
1
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 2. Transfer Characteristics
Figure 3. On–Resistance Variation with
Temperature
VGS = 10 V
ID = 0.8 A
-55
-5
45
95
145
0.6
0.8
V
0
4
0
QT, TOTAL GATE CHARGE (pC)
8
500
VDS = 40 V
TJ = 25
°
C
1000
ID = 200 mA
1500
1.2
2
1.4
1.6
1.8
VGS = 4.5 V
ID = 0.5 A
2000
10
2
6
V
1
TJ, JUNCTION TEMPERATURE (
°
C)
ID = 1.0 mA
-55
-5
45
95
145
0.75
0.875
1.125
1.25
0
0.3
0.4
0.1
0.6
0.2
Figure 4. Threshold Voltage Variation
with Temperature
1
1.5
2
2.5
3
ID
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. Gate Charge
VDS = 10 V
150
°
C
25
°
C
-55
°
C
3.5
0.5
4
0
2
4
10
0
0.3
0.4
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
ID
6
0.1
8
0.6
0.2
0.5
1
3
9
5
7
VGS = 3.25 V
VGS = 2.75 V
VGS = 2.5 V
VGS = 3.0 V
VGS = 3.5 V
0.7
0.8
TJ = 25
°
C
0.7
0.8
0.9
4.5
0.5
0
2.2
-30
20
70
120
2500
3000
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| LBSS138WT1G | 制造商: 功能描述:MOSFET |
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