參數(shù)資料
型號(hào): LCE2009S
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 小信號(hào)晶體管
英文描述: NPN microwave power transistors
中文描述: S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: METAL CERAMIC PACKAGE-4
文件頁(yè)數(shù): 11/16頁(yè)
文件大小: 126K
代理商: LCE2009S
1997 Mar 03
11
Philips Semiconductors
Product specification
NPN microwave power transistors
LBE2003S; LBE2009S;
LCE2009S
Fig.11 Load power as a function of input power.
f = 2 GHz; T
mb
= 25
°
C.
V
CE
= 18 V; I
C
= 110 mA.
(1) G
po
= 9.8 dB.
handbook, halfpage
(1)
0
Pi (mW)
50
150
0
100
PL
(W)
0.5
MGD994
PL1
Fig.12 s
12
as a function of collector current.
handbook, halfpage
0
IC (mA)
50
150
0
100
MGD995
4
typ
S12
(dB)
Class-A operation.
f = 2 GHz; T
mb
= 25
°
C; V
CE
= 18 V.
LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
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