參數資料
型號: LCE2009S
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: NPN microwave power transistors
中文描述: S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: METAL CERAMIC PACKAGE-4
文件頁數: 13/16頁
文件大?。?/td> 126K
代理商: LCE2009S
1997 Mar 03
13
Philips Semiconductors
Product specification
NPN microwave power transistors
LBE2003S; LBE2009S;
LCE2009S
UNIT
A
max.
D1
W
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
4.0
8-32
UNC
α
90
°
SOT442A
97-02-28
b
L
detail X
D
b
3.2
b1
0.75
c
0.125
M1
1.6
1.4
M
3.27
3.01
1.6
N2
N3
min
2.9
8.5
7.5
Q
2.80
2.50
D2
6
L
min.
N1
max.
12.5
N
max.
0
5
10 mm
scale
5.25
5.10
3.38
3.08
5.28
5.12
M
W
Q
A
N2
N
N1
N3
D1
seating plane
M1
D2
D
c
X
1
4
3
2
Studded ceramic package; 4 leads
SOT442A
L
b1
DIMENSIONS (mm are the original dimensions)
Note
1. This device corporates naked beryllium oxide, the dust of witch is toxic.
α
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