參數(shù)資料
型號： LCE2009S
廠商： NXP SEMICONDUCTORS
元件分類： 小信號晶體管
英文描述： NPN microwave power transistors
中文描述： S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝： METAL CERAMIC PACKAGE-4
文件頁數(shù)： 4/16頁
文件大?。?/td> 126K
代理商： LCE2009S
1997 Mar 03
4
Philips Semiconductors
Product specification
NPN microwave power transistors
LBE2003S; LBE2009S;
LCE2009S
Fig.5
DC SOAR; LBE2009S, LCE2009S
handbook, halfpage
3
10
2
10
1
MGD990
10
20
40
IC
(mA)
10
2
(1)
(2)
(3)
VCE (V)
T
mb
≤
75
°
C.
(1) Region of permissible DC operation.
(2) Permissible extension provided R
BE
≤
100
.
(3) Second breakdown limit (independant of temperature).
Fig.6
Power dissipation derating as a function
of mounting-base temperature;
LBE2009S, LCE2009S.
handbook, halfpage
50
0
P tot
(W)
200
Tmb (
o
C)
3
1
0
2
50
100
150
MGD991
THERMAL CHARACTERISTICS
Note
1.
See “Mounting recommendations in the General part of handbook SC15”
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
R
th j-mb
thermal resistance from junction to mounting-base
LBE2003S
LBE2009S; LCE2009S
thermal resistance from mounting-base to heatsink
T
j
= 75
°
C; note 1
65
36
1.5
K/W
K/W
K/W
R
th mb-h
T
j
= 75
°
C; note 1
LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
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