參數(shù)資料
型號: LH28F020SU-L
廠商: Sharp Corporation
英文描述: 2M (256K 】 8) Flash Memory
中文描述: 200萬(256K】8)閃存
文件頁數(shù): 20/31頁
文件大小: 245K
代理商: LH28F020SU-L
LH28F020SU-L
2M (256K × 8) Flash Memory
20
DC Characteristics
V
CC
= 3.3 V ± 0.3 V, T
A
= 0°C to +70°C
SYMBOL
PARAMETER
TYP.
MIN.
MAX.
UNITS
TEST CONDITIONS
NOTE
I
IL
Input Load Current
±1
μA
V
CC
= V
CC
MAX., V
IN
= V
CC
or GND
1
I
LO
Output Leakage
Current
±10
μA
V
CC
= V
CC
MAX., V
IN
= V
CC
or GND
1
I
CCS
V
CC
Standby Current
80
μA
V
CC
= V
CC
MAX.,
CE
= V
CC
±0.2 V
1,4
0.3
4
mA
V
CC
= V
CC
MAX.,
CE
= V
IL
I
CCR1
V
CC
Read Current
35
mA
V
CC
= V
CC
MAX.,
CMOS: CE
= GND ±0.2 V
Inputs = GND ±0.2 V or V
CC
±0.2 V
TTL: CE
= V
IL
Inputs = V
IL
or V
IH
f = 10 MHz, I
OUT
= 0 mA
1, 3, 4
I
CCR2
V
CC
Read Current
10
20
mA
V
CC
= V
CC
MAX.,
CMOS: CE
= GND ±0.2 V
Inputs = GND ±0.2 V or V
CC
±0.2 V
TTL: CE
= V
IL
Inputs = V
IL
or V
IH
f = 5 MHz, I
OUT
= 0 mA
1, 3, 4
I
CCW
V
CC
Write Current
8
12
mA
Byte/Two-Byte Serial Write
in Progress
1
I
CCE
V
CC
Block Erase
Current
6
12
mA
Block Erase in Progress
1
I
CCES
V
CC
Erase Suspend
Current
3
6
mA
CE
= V
IH
Block Erase Suspended
1, 2
I
PPS
V
CC
Standby Current
±1
±10
μA
V
PP
V
CC
1
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