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參數(shù)資料
| 型號(hào)： | LH28F020SU-L |
| 廠商： | Sharp Corporation |
| 英文描述： | 2M (256K 】 8) Flash Memory |
| 中文描述： | 200萬（256K】8）閃存 |
| 文件頁數(shù)： | 27/31頁 |
| 文件大?。?/td> | 245K |
| 代理商： | LH28F020SU-L |
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2M (256K × 8) Flash Memory
LH28F020SU-L
27
AC Characteristics for CE
- Controlled Command Write Operations
1
V
CC
= 3.3 V ±0.3 V, T
A
= 0°C to +70°C
NOTES:
1. Read timing during write and erase are the same as for normal read.
2. Refer to command definition tables for valid address and data values.
3. Sampled, but not 100% tested.
4. Write/Erase durations are measured to valid Status Register (CSR) Data.
5. Byte Write operations are typically performed with 1 Programming Pulse.
6. Address and Data are latched on the rising edge of CE
for all Command Write Operations.
SYMBOL
PARAMETER
TYP.
MIN.
MAX.
UNITS
NOTE
t
AVAV
Write Cycle Time
150
ns
t
VPEH
V
PP
Setup to CE
Going High
100
ns
3
t
WLEL
WE Setup to CE
Going Low
0
ns
t
AVEH
Address Setup to CE
Going High
110
ns
2, 6
t
DVEH
Data Setup to CE
Going High
110
ns
2, 6
t
ELEH
CE
Pulse Width
110
ns
t
EHDX
Data Hold from CE
High
10
ns
2
t
EHAX
Address Hold from CE
High
10
ns
2
t
EHWH
WE Hold from CE
High
10
ns
t
EHEL
CE
Pulse Width High
75
ns
t
GHEL
Read Recovery before Write
0
ns
t
EHGL
Write Recovery before Read
120
ns
t
QVVL
t
EHQV1
t
EHQV2
V
PP
Hold from Valid Status Register Data
0
μs
Duration of Byte Write Operation
20
8
μs
4, 5
Duration of Block Erase Operation
0.3
s
4
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|---|---|
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