LH5P8128
CMOS 1M (128K
×
8) Pseudo-Static RAM
FEATURES
131,072
×
8 bit organization
Access times (MAX.): 60/80/100 ns
Cycle times (MIN.): 100/130/160 ns
Single +5 V power supply
Power consumption:
Operating: 572/385/275 mW (MAX.)
Standby (CMOS level): 1.1 mW (MAX.)
TTL compatible I/O
Available for auto-refresh and self-refresh
modes
512 refresh cycles/8 ms
Compatible with standard 1M
SRAM pinout
Packages:
32-pin, 600-mil DIP
32-pin, 525-mil SOP
32-pin, 8
×
20 mm
2
TSOP (Type I)
DESCRIPTION
The LH5P8128 is a 1M bit Pseudo-Static RAM
organized as 131,072
×
8 bits. It is fabricated using
silicon-gate CMOS process technology.
A PSRAM uses on-chip refresh circuitry with a DRAM
memory cell for pseudo static operation which elimi-
nates external clock inputs, while having the same
pinout as industry standard SRAMs. Moreover, due to
the functional similarities between PSRAMs and
SRAMs, existing 128K
×
8 SRAM sockets can be filled
with the LH5P8128 with little or no changes. The
advantage is the cost savings realized with the lower
cost PSRAM.
The LH5P8128 PSRAM has the ability to fill the gap
between DRAM and SRAM by offering low cost, low
power standby and a simple interface.
PIN CONNECTIONS
5P8128-1
TOP VIEW
5
6
7
8
11
12
A
0
A
3
A
2
26
25
24
23
22
21
18
A
5
A
4
9
10
A
1
20
19
A
6
A
9
A
11
OE
A
10
CE
1
I/O
7
13
14
15
28
27
I/O
0
I/O
1
A
13
A
8
16
17
I/O
2
GND
A
7
I/O
4
I/O
3
I/O
5
32-PIN DIP
32-PIN SOP
3
4
A
12
30
29
CE
2
R/W
A
14
1
2
A
16
32
31
V
CC
A
15
RFSH
I/O
6
Figure 1. Pin Connections for DIP and
SOP Packages
2
3
4
5
6
7
9
10
8
A
9
A
8
11
1
32
31
30
29
26
25
28
27
24
23
OE
A
10
32-PIN TSOP (Type I)
12
15
16
13
14
21
20
22
19
17
18
A
11
A
13
R/W
CE
2
A
15
V
CC
RFSH
I/O
2
I/O
1
I/O
0
A
0
A
1
A
2
A
3
I/O
7
I/O
6
CE
1
I/O
5
I/O
4
I/O
3
GND
5P8128-1A
A
16
A
14
A
12
A
7
A
6
A
5
A
4
NOTE:
Reverse bend available on request.
Figure 2. Pin Connections for TSOP Package
1