參數(shù)資料
型號: LH5P8128
廠商: Sharp Corporation
英文描述: CMOS 1M (128K x 8) Pseudo-Static RAM
中文描述: 100萬的CMOS(128K的× 8)偽靜態(tài)存儲器
文件頁數(shù): 3/13頁
文件大?。?/td> 116K
代理商: LH5P8128
PARAMETER
SYMBOL
CONDITIONS
MIN.
MAX.
UNIT
NOTE
Operating current
LH5P8128-60
LH5P8128-80
LH5P8128-10
TTL Input
CMOS Input
TTL Input
CMOS Input
I
CC1
tRC = t
RC
(MIN)
104
70
50
1
0.2
1
0.2
mA
1, 2
Standby current
I
CC2
mA
1, 3
1, 4
1, 5
1, 6
Self-refresh average
current
I
CC3
mA
Input leakage current
I
LI
0 V
V
IN
6.5 V
0 V except on test pins
0 V
V
OUT
V
CC
+ 0.3 V
Output in high-
impedance state
I
OUT
= -1 mA
-10
10
μ
A
I/O leakage current
I
LO
-10
10
μ
A
Output HIGH voltage
V
OH
2.4
V
Output LOW voltage
V
OL
I
OUT
= 4 mA
0.4
V
NOTES:
1.
Specified values are with outputs open.
2.
Depends on the cycle time.
3.
CE
1
= V
IH
, RFSH = V
IH
4.
CE
1
= V
CC
- 0.2 V, RFSH = V
CC
- 0.2 V
5.
CE
1
= V
IH
, RFSH = V
IL
6.
CE
1
= V
CC
- 0.2 V, RFSH = 0.2 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
UNIT
NOTE
Applied voltage on any pins
Output short circuit current
Power dissipation
Operating temperature
Storage temperature
V
T
I
O
P
D
Topr
Tstg
-1.0 to +7.0
50
600
0 to +70
-55 to +150
V
1
mA
mW
°
C
°
C
NOTE:
1.
The maximum applicable voltage on any pin with respect to GND.
RECOMMENDED OPERATING CONDITIONS (T
A
= 0 to +70
°
C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Supply voltage
V
CC
GND
V
IH
V
IL
4.5
0
2.4
-1.0
5.0
0
5.5
0
V
V
V
V
Input voltage
V
CC
+ 0.3
0.8
CAPACITANCE (T
A
= 0 to +70
°
C, f = 1MHz, V
CC
= 5.0 V
±
10%)
PARAMETER
CONDITIONS
SYMBOL
MIN.
MAX.
UNIT
Input capacitance
A
0
- A
16
R/W, OE
CE
1
, CE
2
RFSH
I/O
0
- I/O
7
C
IN1
C
IN2
C
IN3
C
IN4
C
OUT1
8
5
5
5
10
pF
pF
pF
pF
pF
Input/output capacitance
DC CHARACTERISTICS (T
A
= 0 to +70
°
C, V
CC
= 5.0 V
±
10%)
CMOS 1M (128K
×
8) Pseudo-Static RAM
LH5P8128
3
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