參數(shù)資料
型號: LH5P860N-80
廠商: Sharp Corporation
英文描述: CMOS 512K (64K x 8) Pseudo-Static RAM
中文描述: 為512k的CMOS(64K的× 8)偽靜態(tài)存儲器
文件頁數(shù): 3/13頁
文件大?。?/td> 108K
代理商: LH5P860N-80
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
UNIT
NOTE
Applied voltage on all pins
Output short circuit current
Power dissipation
Operating temperature
Storage temperature
V
T
I
O
P
D
Topr
Tstg
–1.0 to +7.0
50
600
0 to +70
–65 to +150
V
1
mA
mW
°
C
°
C
NOTE:
1.
The maximum applicable voltage on any pin with respect to GND.
RECOMMENDED OPERATING CONDITIONS (T
A
= 0 to +70
°
C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Supply voltage
V
CC
GND
V
IH
V
IL
4.5
0
2.4
–1.0
5.0
0
5.5
0
V
V
V
V
Input voltage
V
CC
+ 0.3
0.8
CAPACITANCE (T
A
= 0 to +70
°
C, f = 1 MHz, V
CC
= 5.0 V
±
10%)
PARAMETER
CONDITIONS
SYMBOL
MIN.
MAX.
UNIT
Input capacitance
A
0
– A
15
R/W, OE, RFSH
CE
1
, CE
2
I/O
0
– I/O
7
C
IN1
C
IN2
C
IN3
C
OUT1
8
5
5
10
pF
pF
pF
pF
Input/Output capacitance
DC CHARACTERISTICS (T
A
= 0 to +70
°
C, V
CC
= 5.0 V
±
10%)
PARAMETER
SYMBOL
CONDITIONS
MIN.
MAX.
UNIT
NOTE
Average supply current in
normal operation
I
CC1
80
mA
1, 2
Supply current in
standby mode
I
CC2
TTL input
CMOS input
TTL input
CMOS input
0 V
V
IN
6.5 V,
0 V except on test pins
0 V
V
OUT
V
CC
+ 0.3 V,
Outputs in high-impedance
state
I
OUT
= –1.0 mA
1.0
0.5
1.0
0.5
mA
1, 3
1, 4
1, 5
1, 6
Average supply current in
self refresh cycle
I
CC3
mA
Input leakage current
I
LI
–10
10
μ
A
I/O leakage current
I
LO
–10
10
μ
A
Output HIGH voltage
V
OH
2.4
V
Output LOW voltage
V
OL
I
OUT
= 4.0 mA
0.4
V
NOTES:
1.
Specified values are with outputs open.
2.
I
CC1
depends on the cycle time.
3.
CE
1
= V
IH
, RFSH = V
IH
.
4.
CE
1
= V
CC
– 0.2 V, RFSH = V
CC
– 0.2 V.
5.
CE
1
= V
IH
, RFSH = V
IL
.
6.
CE
1
= V
CC
– 0.2 V, RFSH = 0.2 V.
CMOS 512K (64K
×
8) Pseudo-Static RAM
LH5P860
3
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