參數(shù)資料
型號(hào)： LH5P864
廠商： Sharp Corporation
英文描述： CMOS 512K (64K x 8) Pseudo-Static RAM
中文描述： 為512k的CMOS（64K的× 8）偽靜態(tài)存儲(chǔ)器
文件頁(yè)數(shù)： 3/10頁(yè)
文件大?。?/td> 76K
代理商： LH5P864
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
UNIT
NOTE
Applied voltage on any pin
Output short circuit current
Power dissipation
Operating temperature
Storage temperature
V
T
I
O
P
D
Topr
Tstg
-1.0 to +7.0
50
600
0 to +70
-65 to +150
V
1
mA
mW
°
C
°
C
NOTE:
1.
The maximum applicable voltage on any pin with respect to GND.
RECOMMENDED OPERATING CONDITIONS (T
A
= 0 to +70
°
C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Supply voltage
V
CC
V
IH
V
IL
4.5
2.4
-1.0
5.0
5.5
V
V
V
Input voltage
V
CC
+ 0.3
0.8
CAPACITANCE (T
A
= 0 to +70
°
C, f = 1MHz, V
CC
= 5.0 V
±
10%)
PARAMETER
CONDITIONS
SYMBOL
MIN.
MAX.
UNIT
Input capacitance
A
0
- A
14
R/W, OE/RFSH
CE
1
, CE
2
TEST
1
I/O
0
- I/O
7
C
IN1
C
IN2
C
IN3
C
IN4
C
OUT1
8
8
8
10
10
pF
pF
pF
pF
pF
Input/Output capacitance
DC CHARACTERISTICS (T
A
= 0 to +70
°
C, V
CC
= 5.0 V
±
10%)
PARAMETER
SYMBOL
CONDITIONS
MIN.
MAX.
UNIT
NOTE
Operating current
I
CC1
t
RC
= t
RC
(MIN.)
TTL input
CMOS input
TTL input
CMOS input
0 V
≤
V
IN
≤
6.5 V,
0 V except on test pins
0 V
≤
V
OUT
≤
V
CC
+ 0.3 V,
Outputs in High-Z state
I
OUT
= -1.0 mA
80
4.0
0.5
4.0
0.5
mA
mA
mA
mA
mA
1, 2
1, 3, 5
1, 3, 6
1, 4, 5
1, 4, 6
Standby current
I
CC2
Self refresh average current
I
CC3
Input leakage current
I
LI
-10
10
μ
A
Output leakage current
I
LO
-10
10
μ
A
Output HIGH voltage
V
OH
2.4
V
Output LOW voltage
V
OL
I
OUT
= 4.0 mA
0.4
V
NOTES:
1.
Specified values are with outputs open.
2.
I
CC1
depends on the cycle time.
3.
CE
1
= CE
2
= V
IH
, OE/RFSH = V
IH
4.
CE
1
= CE
2
= V
IH
, OE/RFSH = V
IL
5.
CE
1
= CE
2
= V
CC
– 0.2 V, OE/RFSH = V
CC
– 0.2 V
6.
CE
1
= CE
2
= V
CC
– 0.2 V, OE/RFSH = 0.2 V
CMOS 512K (64K
×
8) Pseudo-Static RAM
LH5P864
3
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