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參數(shù)資料
| 型號(hào)： | LH5PV8512 |
| 廠商： | Sharp Corporation |
| 英文描述： | CMOS 4M (512K x 8) Pseudo-Static RAM |
| 中文描述： | 的CMOS 4分（為512k × 8）偽靜態(tài)存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大?。?/td> | 90K |
| 代理商： | LH5PV8512 |
AC ELECTRICAL CHARACTERISTICS
1, 2, 3, 4, 5
(T
A
= 0 to +70
°
C, V
CC
= 3.0 V
±
0.15 V)
PARAMETER
SYMBOL
t
RC
t
RMW
t
CE
t
P
t
AS
t
AH
t
RCS
t
RCH
t
CEA
t
OEA
t
CLZ
t
OLZ
t
WLZ
t
CHZ
t
OHZ
t
WHZ
t
OES
t
OEH
t
OCD
t
WP
t
WCS
t
WCH
t
DSW
t
DSC
t
DHW
t
DHC
t
T
t
REF
t
FC
t
RFD
t
FAP
t
FP
t
FAS
MIN.
190
250
120
70
0
30
0
0
20
0
5
0
0
15
0
35
35
120
30
30
0
0
2
190
70
80
40
8
MAX.
10,000
120
60
30
30
30
10,000
10,000
50
32
8,000
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
ns
ns
ms
NOTES
6
6
7
7
8
8
8
8
8
8
9
9
9
9
10, 13, 14
11, 15
11, 12, 13, 14, 15
Random read, write cycle time
Random modify write cycle time
CE pulse width
CE precharge time
Address setup time
Address hold time
Read command setup time
Read command hold time
CE access time
OE access time
CE to output in Low-Z
OE to output in Low-Z
Write disable to output in Low-Z
Chip disable to output in High-Z
Output disable to output in High-Z
WE to output in High-Z
OE set up time from CE
OE hold time from CE
OE setup time from chip disable
Write command pulse width
Write command setup time
Write command hold time
Data setup time from write disable
Data setup time from chip disable
Data hold time from write disable
Data hold time from chip disable
Transition time (rise and fall)
Refresh time interval (2,048 cycle)
Auto refresh cycle time
Refresh delay time from CE
Refresh pulse width (Auto refresh)
Refresh precharge time (Auto refresh)
Refresh pulse width (Self refresh)
CE delay time from refresh precharge
(Self refresh)
t
FRS
600
ns
DATA RETENTION CHARACTERISTICS
12, 13, 14, 15, 16, 17, 18, 19, 20
(T
A
= 0 to +70
°
C)
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
NOTES
Data retention voltage
Data retention current
(V
CC
= 3.15 V, CE = V
CC
- 0.2 V, OE/RFSH = 0.2 V)
Refresh setup time
Recover time from data retention mode
V
R
2.2
3.15
V
I
CCDR
70
μ
A
t
FS
t
FR
0
5
ns
ms
CMOS 4M (512K
×
8) Pseudo-Static RAM
LH5PV8512
5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH5PV8512N-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Pseudo-Static RAM |
| LH-5S-1 | 制造商:Shinagawa Shoko 功能描述: |
| LH-5S-10 | 制造商:Shinagawa Shoko 功能描述: |
| LH-5S-12 | 制造商:Shinagawa Shoko 功能描述: |
| LH-5S-15 | 制造商:Shinagawa Shoko 功能描述: |
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