參數(shù)資料
型號(hào): LH6V4256
廠商: Sharp Corporation
英文描述: CMOS 1M (256K x 4) Dynamic RAM
中文描述: 100萬的CMOS(256K × 4)動(dòng)態(tài)隨機(jī)存儲(chǔ)器
文件頁數(shù): 5/18頁
文件大小: 198K
代理商: LH6V4256
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RATING
UNIT
NOTE
Applied voltage on all pins
–0.5 to +5.5
V
1
Output short circuit current
50
mA
Power dissipation
1.0
W
Operating temperature
0 to +70
°
C
°
C
Storage temperature
–65 to +150
NOTE:
1.
The maximum applicable voltage on any pin with respect to V
SS
.
RECOMMENDED OPERATING CONDITIONS (T
A
= 0 to +70
°
C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Supply voltage
V
CC
V
SS
V
IH
V
IL
3.0
0
3.3
0
3.6
0
V
V
Input voltage
2.3
–0.3
V
CC
+ 0.3
0.6
V
V
CAPACITANCE (T
A
= 0 to +70
°
C, f = 1 MHz, V
CC
= 3.3 V
±
0.3 V)
PARAMETER
CONDITIONS
SYMBOL
MIN.
MAX.
UNIT
Input capacitance
A
0
– A
8
RAS, OE, CAS, WE
C
IN1
C
IN2
C
OUT1
6
pF
7
pF
Input/output capacitance
I/O
1
– I/O
4
7
pF
DC ELECTRICAL CHARACTERISTICS (T
A
= 0 to +70
°
C, V
CC
= 3.3 V
±
0.3 V)
PARAMETER
CONDITIONS
SYMBOL
MIN.
MAX.
UNIT
NOTE
Average supply current in normal operation
I
CC1
35
mA
1, 2, 3
Supply current in
standby mode
RAS = CAS
V
CC
– 0.2 V
I
CC2
0.15
mA
1
Average supply current in fast page mode
I
CC3
I
CC4
I
CC5
30
mA
1, 2
Average supply current in CAS before RAS refresh cycle
35
mA
1, 2, 3
Average supply current in RAS only refresh cycle
35
mA
1, 2, 3
Input leakage current
0 V
V
IN
4.8 V
0 V except on test pins
I
LI
–10
10
μ
A
Output leakage current
0 V
V
OUT
4.8 V
Output in high-impedance state
I
LO
–10
10
μ
A
Output ‘High’ Voltage
I
OUT
= –200
μ
A
I
OUT
= 1 mA
V
OH
V
OL
2.15
V
Output ‘Low’ Voltage
0.4
V
NOTES:
1.
2.
3.
Specified values are with outputs open.
I
CC1
, I
CC3
, I
CC4
, and I
CC5
depend on cycle time.
Cycle time is 190 ns. Address transition is once at RAS = V
IH
and once at RAS = V
IL
.
LH6V4256
CMOS 1M (256K
×
4) Dynamic RAM
2-18
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