參數(shù)資料
型號(hào): LH6V4256
廠商: Sharp Corporation
英文描述: CMOS 1M (256K x 4) Dynamic RAM
中文描述: 100萬(wàn)的CMOS(256K × 4)動(dòng)態(tài)隨機(jī)存儲(chǔ)器
文件頁(yè)數(shù): 7/18頁(yè)
文件大小: 198K
代理商: LH6V4256
FAST PAGE MODE CYCLE
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
NOTE
Fast page mode cycle time
CAS precharge time
CAS precharge access time
Read-write cycle time (page mode)
t
PC
t
CP
t
CACP
t
PRWC
60
10
ns
ns
ns
ns
55
125
1
NOTE:
1.
t
RWC
, t
RWD
, t
AWD
, t
CWD
, and t
PRWC
are not restrictive operating parameters and does not represent a limit of operation.
WRITE CYCLE
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
NOTE
EARLY WRITE
t
WCS
t
WCH
t
DS
t
DH
OE CONTROLLED
t
CWS
t
RWL
t
CWL
t
WP
t
OEH
Write command setup time (CAS)
Write command hold time (CAS)
Data input setup time
Data input hold time
0
15
0
20
ns
ns
ns
ns
1
CAS setup time
Write command lead time (RAS)
Write command lead time (CAS)
Write pulse width (WE)
OE hold time (WE)
0
30
25
15
20
ns
ns
ns
ns
ns
1
NOTE:
1.
t
and t
are not restrictive operating parameters. If t
WCS
t
WCS
(MIN), the cycle is an early write cycle
and data out buffers remain inactive until CAS rises again.
READ-WRITE CYCLE/READ-MODIFY-WRITE CYCLE
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
NOTE
Read-write cycle time
WE delay time (RAS)
Column address delay time (WE)
WE delay time (CAS)
OE delay time
t
RWC
t
RWD
t
AWD
t
CWD
t
OED
260
135
85
65
25
ns
ns
ns
ns
ns
1
1
1
1
NOTE:
1.
t
RWC
, t
RWD
, t
AWD
, t
CWD
, and t
PRWC
are not restrictive operating parameters and does not represent a limit of operation.
CAS BEFORE RAS REFRESH CYCLE/HIDDEN REFRESH CYCLE
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CAS setup time (RAS)
CAS hold time (RAS)
RAS
CAS precharge time (RAS
↑)
RAS
CAS precharge time (RAS
↓)
WE precharge time (RAS)
t
CSR
t
CHR
t
RPCP
t
RPCN
t
WRP
0
20
10
ns
ns
ns
115
0
ns
ns
LH6V4256
CMOS 1M (256K
×
4) Dynamic RAM
2-20
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