參數(shù)資料
型號: LIS3L02DQ
廠商: STMICROELECTRONICS
元件分類: 模擬信號調(diào)理
英文描述: SPECIALTY ANALOG CIRCUIT, QCC44
封裝: 7 X 7 MM, 1.80 MM HEIGHT, QFN-44
文件頁數(shù): 14/20頁
文件大小: 473K
代理商: LIS3L02DQ
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LIS3L02DQ
Table 3. Mechanical Characteristics1
(Temperature range -20°C to +70°C). All the parameters are specified @ Vdd = 3.3V and T = 25°C unless
otherwise noted.
Notes: 1. Product is factory calibrated at 3.3 Volts.The device can be used from 2.7 V to 3.6 V.
2. Typical specifications are not guaranteed
3. Verified by wafer level test and measurement of initial offset and sensitivity.
4. 1 LSB is equal to 0.97mg=(4g / 4096)
5. Zero g level output is in two's complement encode.
6. Contribution to the measuring output of the inclination/acceleration along any perpendicular axis.
7. Contribution of the inclination/acceleration along any perpendicular axis to the measuring output.
8. Self test output changes linearly with the power supply. "Selftest output change" describes the output signal change if the "ST" bit
in CRT_REG1 is changed from normal mode to self test enable.
9. Sensor bandwidth is defined by the Decimation Factor (see table 4)
Symbol
Parameter
Test Condition
Min.
Typ.2
Max.
Unit
Ar
Acceleration Range3
±2.0
g
So
Sensitivity4
974
1024
1074
LSB/g
SoDr
Sensitivity Change Vs
Temperature
Delta from +25°C
±0.2
LSB/°C
OffLSB
Zero-g Level
T = 25°C
-52
0
+52
LSB
OffDr
Zero-g Level Change Vs
Temperature
Delta from +25°C
±0.8
LSB/°C
NL
Non Linearity5
Best fit straight line
X, Y axis
±0.3
±1.5
% FS
Best fit straight
line;
Z axis
±0.6
±2.0
% FS
CrossAx
Cross-Axis6
±2
±4%
Vst
Self test Output Change7
T = 25°C
Vdd=3.3V
X axis
Ratiometric Vs Vdd
+100
+250
+400
LSB
T = 25°C
Vdd=3.3V
Y axis
Ratiometric Vs Vdd
-100
-250
-400
LSB
T = 25°C
Vdd=3.3V
Z axis
Ratiometric Vs Vdd
-100
-250
-400
LSB
Fres
Sensing Element Resonance
Frequency8
all axes
1.5
kHz
Top
Operating Temperature
Range
-20
+70
°C
Wh
Product Weight
0.2
gram
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