參數(shù)資料
型號: LIS3L02DQ
廠商: STMICROELECTRONICS
元件分類: 模擬信號調理
英文描述: SPECIALTY ANALOG CIRCUIT, QCC44
封裝: 7 X 7 MM, 1.80 MM HEIGHT, QFN-44
文件頁數(shù): 15/20頁
文件大小: 473K
代理商: LIS3L02DQ
Obsolete
Product(s)
- Obsolete
Product(s)
Obsolete
Product(s)
- Obsolete
Product(s)
LIS3L02DQ
4/20
Table 4. Electrical Characteristics1
(Temperature range -20°C to +70°C). All the parameters are specified @ Vdd=3.3V and T=25°C unless
otherwise noted.
Notes: 1. Product is factory calibrated at 3.3V.The device can be used from 2.7 V to 3.6 V
2. Typical specifications are not guaranteed.
3. Turn on time is related to output rate and it's defined as: Ton =6/DR.Ton time is the time between leaving Power Down mode and
reaching 99% of actual acceleration value.
3
Absolute Maximum Rating
Stresses above those listed as “absolute maximum ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device under these conditions is not implied.
Exposure to maximum rating conditions for extended periods may affect device reliability.
Table 5. Absolute Maximum Rating
Symbol
Parameter
Test Condition
Min.
Typ.2
Max.
Unit
Vdd
Supply Voltage
2.7
3.3
3.6
V
Vdd_IO
I/O pads Supply Voltage
1.8
Vdd+0.1
V
Idd
Supply Current
T = 25°C
1
1.5
mA
IddPdn
Current Consumption in
Power-Down Mode
T = 25°C
15
A
BW
Digital Filter Cut-Off
frequency (-3dB)
Dec factor = 128
70
Hz
Dec factor = 64
140
Hz
Dec factor = 32
280
Hz
Dec factor = 8
1120
Hz
DR
Output Data Rate
Dec factor = 128
280
Hz
Dec factor = 64
560
Hz
Dec factor = 32
1120
Hz
Dec factor = 8
4480
Hz
Fmax
SPI Frequency
Vdd_IO<2.4V
4
MHz
Vdd_IO>2.4V
8
MHz
Ton
Turn on time at exit from
Power Down Mode 3
6/DR
ms
Symbol
Ratings
Maximum Value
Unit
Vdd
Supply Voltage
-0.3 to 6
V
Vdd_IO
I/O pads Supply Voltage
-0.3 to Vdd +0.1
V
Vin
Input Voltage on any control pin
(CS, SCL/SPC, SDA/SDI/SDO,SDO,RDY/INT)
-0.3 to Vdd +0.3
V
APOW
Acceleration (Any axis, Powered, Vdd=3.3V)
3000g for 0.5 ms
10000g for 0.1 ms
AUNP
Acceleration (Any axis, Not Powered)
3000g for 0.5 ms
10000g for 0.1 ms
TSTG
Storage Temperature Range
-40 to +125
°C
ESD
Electrostatic Discharge Protection
1 (HBM)
kV
200 (MM)
V
1.5 (CDM)
kV
This is an ESD sensitive device, improper handling can cause permanent damages to the part
This is a Mechanical Shock sensitive device, improper handling can cause permanent damages to the part
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