參數(shù)資料
型號(hào): LM2744
廠商: National Semiconductor Corporation
英文描述: Low Voltage N-Channel MOSFET Synchronous Buck Regulator Controller with External Reference
中文描述: 低壓N溝道MOSFET同步降壓穩(wěn)壓控制器與外部參考
文件頁(yè)數(shù): 4/22頁(yè)
文件大?。?/td> 663K
代理商: LM2744
Electrical Characteristics
(Continued)
V
= 3.3V unless otherwise indicated. Typicals and limits appearing in plain type apply for T
= T
= 25C. Limits appearing in
boldface type apply over full Operating Temperature Range. Datasheet min/max specification limits are guaranteed by design,
test, or statistical analysis.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
GATE DRIVE
I
Q-BOOT
R
HG_UP
BOOT Pin Quiescent Current
High-Side MOSFET Driver
Pull-Up ON resistance
High-Side MOSFET Driver
Pull-Down ON resistance
Low-Side MOSFET Driver
Pull-Up ON resistance
Low-Side MOSFET Driver
Pull-Down ON resistance
V
BOOT
= 12V, V
SD
= 0
18
90
μA
V
BOOT
- V
SW
= 9.5V
@
350mA
3
R
HG_DN
V
BOOT
- V
SW
= 4.5V
@
350mA
2
R
LG_UP
V
BOOT
- V
SW
= 9.5V
@
350mA
3
R
LG_DN
V
BOOT
- V
SW
= 4.5V
@
350mA
2
OSCILLATOR
F
SW
PWM Frequency
R
FADJ
= 702.1 k
R
FADJ
= 98.74 k
R
FADJ
= 45.74 k
R
FADJ
= 24.91 k
F
SW
= 300kHz
F
SW
= 600kHz
F
SW
= 1MHz
50
300
600
1000
80
76
73
kHz
475
725
D
Max High-Side Duty Cycle
%
LOGIC INPUTS AND OUTPUTS
V
STBY-IH
Standby High Trip Point
V
FB
= 0.575V, V
BOOT
= 3.3V,
V
SD
Rising
V
FB
= 0.575V, V
BOOT
= 3.3V,
V
SD
Falling
V
SD
Rising
V
SD
Falling
FB Falling, V
REF
= 0.5V
FB Falling, V
REF
= 1.5V
FB Rising, V
REF
= 0.5V
FB Rising, V
REF
= 1.5V
FB Falling
FB Rising
1.1
V
V
STBY-IL
Standby Low Trip Point
0.232
V
V
SD-IH
V
SD-IL
V
PWGD-TH-LO
SD Pin Logic High Trip Point
SD Pin Logic Low Trip Point
PWGD Pin Trip Points
1.3
V
V
V
V
V
V
0.8
0.3262
0.993
0.551
1.6692
0.347
1.045
0.586
1.757
60
90
0.3678
1.097
0.621
1.8448
V
PWGD-TH-HI
PWGD Pin Trip Points
V
PWGD-HYS
PWGD Hysteresis
mV
Note 1:
Absolute maximum ratings indicate limits beyond which damage to the device may occur.
Operating ratings
indicate conditions for which the device
operates correctly.
Opearting Ratings
do not imply guaranteed performance limits.
Note 2:
The power MOSFETs can run on a separate 1V to 16V rail (Input voltage, V
IN
). Practical lower limit of V
IN
depends on selection of the external MOSFET.
Note 3:
The human body model is a 100pF capacitor discharged through a 1.5k resistor into each pin.
L
www.national.com
4
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