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參數(shù)資料
| 型號(hào)： | LMBT3906DW1T1 |
| 廠(chǎng)商： | 樂(lè)山無(wú)線(xiàn)電股份有限公司 |
| 英文描述： | Dual Bias Resistor Transistor |
| 中文描述： | 雙偏置電阻晶體管 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 189K |
| 代理商： | LMBT3906DW1T1 |
LESHAN RADIO COMPANY, LTD.
L
MBT3906DW1T1
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(2)
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
–40
–
Vdc
Collector–Base Breakdown Voltage
–40
–
Vdc
Emitter–Base Breakdown Voltage
–5.0
–
Vdc
Base Cutoff Current
–
–50
nAdc
Collector Cutoff Current
–
–50
nAdc
ON CHARACTERISTICS (2)
DC Current Gain
(IC = –0.1 mAdc, VCE = –1.0 Vdc)
(IC = –1.0 mAdc, VCE = –1.0 Vdc)
(IC = –10 mAdc, VCE = –1.0 Vdc)
(IC = –50 mAdc, VCE = –1.0 Vdc)
(IC = –100 mAdc, VCE = –1.0 Vdc)
hFE
60
80
100
60
30
–
–
300
–
–
–
Collector–Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50 mAdc, IB = –5.0 mAdc)
VCE(sat)
–
–
–0.25
–0.4
Vdc
Base–Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50 mAdc, IB = –5.0 mAdc)
VBE(sat)
–0.65
–
–0.85
–0.95
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
fT
250
–
MHz
Output Capacitance
Cobo
Cibo
–
4.5
pF
Input Capacitance
–
10.0
pF
2. Pulse Test: Pulse Width
≤
300
μ
s; Duty Cycle
≤
2.0%.
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
Input Impedance
(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz)
hie
2.0
12
k
Voltage Feedback Ratio
(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz)
hre
0.1
10
X 10–4
Small–Signal Current Gain
(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz)
hfe
100
400
–
Output Admittance
(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz)
hoe
3.0
60
mhos
Noise Figure
(VCE = –5.0 Vdc, IC = –100 Adc, RS = 1.0 k
, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
NF
–
4.0
dB
Delay Time
(VCC = –3.0 Vdc, VBE = 0.5 Vdc)
(IC = –10 mAdc, IB1 = –1.0 mAdc)
(VCC = –3.0 Vdc, IC = –10 mAdc)
(IB1 = IB2 = –1.0 mAdc)
td
tr
ts
tf
–
35
ns
Rise Time
–
35
Storage Time
–
225
ns
Fall Time
–
75
LMBT3906DW1T1-2/6
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PDF描述 |
|---|---|
| LMBT3906LT1 | General Purpose Transistors |
| LMBT3906LT1G | General Purpose Transistors |
| LMBT3906TT1 | General Purpose Transistors |
| LMBT3946DW1T1 | Dual General Purpose Transistors |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LMBT3906DW1T1G | 制造商:LRC 制造商全稱(chēng):Leshan Radio Company 功能描述:Dual Bias Resistor Transistor |
| LMBT3906LT1 | 制造商:LRC 制造商全稱(chēng):Leshan Radio Company 功能描述:General Purpose Transistors |
| LMBT3906LT1G | 制造商: 功能描述:TRANSISTOR |
| LMBT3906TT1 | 制造商:LRC 制造商全稱(chēng):Leshan Radio Company 功能描述:General Purpose Transistors |
| LMBT3906TT1G | 制造商:LRC 制造商全稱(chēng):Leshan Radio Company 功能描述:General Purpose Transistors |
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