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參數(shù)資料
| 型號： | LMBT3906DW1T1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Dual Bias Resistor Transistor |
| 中文描述： | 雙偏置電阻晶體管 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 189K |
| 代理商： | LMBT3906DW1T1 |
LESHAN RADIO COMPANY, LTD.
L
MBT3906DW1T1
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
3 V
275
10 k
1N916
Cs < 4 pF*
3 V
275
10 k
Cs < 4 pF*
< 1 ns
+0.5 V
10.6 V
300 ns
DUTY CYCLE = 2%
< 1 ns
+9.1 V
10.9 V
DUTY CYCLE = 2%
t1
0
10 < t1 < 500 s
* Total shunt capacitance of test jig and connectors
TYPICAL TRANSIENT CHARACTERISTICS
Figure 3. Capacitance
REVERSE BIAS (VOLTS)
2.0
3.0
5.0
7.0
10
1.0
0.1
Figure 4. Charge Data
IC, COLLECTOR CURRENT (mA)
5000
1.0
VCC = 40 V
IC/IB = 10
Q
3000
2000
1000
700
500
300
200
100
70
50
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
C
1.0
2.0 3.0
5.0 7.0 10
20 30 40
0.2 0.3
0.5 0.7
QT
QA
Cibo
Cobo
TJ = 25
°
C
TJ = 125
°
C
Figure 5. Turn–On Time
IC, COLLECTOR CURRENT (mA)
70
50
100
200
300
500
T
1.0
2.0 3.0
10
20
70
5
100
Figure 6. Fall Time
IC, COLLECTOR CURRENT (mA)
5.0 7.0
30
50
200
10
30
20
7
70
50
100
200
300
500
1.0
2.0 3.0
10
20
70
5
100
5.0 7.0
30
50
200
10
30
20
7
t
f
VCC = 40 V
IB1 = IB2
IC/IB = 20
IC/IB = 10
IC/IB = 10
tr @ VCC = 3.0 V
td @ VOB = 0 V
40 V
15 V
2.0 V
LMBT3906DW1T1-3/6
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LMBT3906LT1 | General Purpose Transistors |
| LMBT3906LT1G | General Purpose Transistors |
| LMBT3906TT1 | General Purpose Transistors |
| LMBT3946DW1T1 | Dual General Purpose Transistors |
| LMBT4401LT1 | General Purpose Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LMBT3906DW1T1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Dual Bias Resistor Transistor |
| LMBT3906LT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors |
| LMBT3906LT1G | 制造商: 功能描述:TRANSISTOR |
| LMBT3906TT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors |
| LMBT3906TT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:General Purpose Transistors |
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