參數(shù)資料
型號: LMBT3946DW1T1
廠商: 樂山無線電股份有限公司
英文描述: Dual General Purpose Transistors
中文描述: 雙通用晶體管
文件頁數(shù): 9/11頁
文件大?。?/td> 222K
代理商: LMBT3946DW1T1
LESHAN RADIO COMPANY, LTD.
LMBT3946DW1T1 9/11
LMBT3946DW1T1
TYPICAL ELECTRICAL CHARACTERISTICS
LMBT3946DW1T1
(PNP)
TYPICAL AUDIO SMALL±SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = ±5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz)
Figure 25.
f, FREQUENCY (kHz)
2.0
3.0
4.0
5.0
1.0
0.1
Figure 26.
Rg, SOURCE RESISTANCE (k OHMS)
0
N
1.0
2.0
4.0
10
20
40
0.2
0.4
0
100
4
6
8
10
12
2
0.1
1.0
2.0
4.0
10
20
40
0.2
0.4
100
N
f = 1.0 kHz
IC = 1.0 mA
IC = 0.5 mA
IC =50
μ
A
IC =100
μ
A
SOURCE RESISTANCE = 200
IC = 1.0 mA
SOURCE RESISTANCE = 200
IC = 0.5 mA
SOURCE RESISTANCE = 2.0 k
IC= 100
μ
A
SOURCE RESISTANCE = 2.0 k
IC = 50
μ
A
(PNP)
(PNP)
h PARAMETERS
(VCE = ±10 Vdc, f = 1.0 kHz, TA = 25C)
Figure 27. Current Gain
IC, COLLECTOR CURRENT (mA)
70
100
200
300
50
Figure 28. Output Admittance
IC, COLLECTOR CURRENT (mA)
f
o
μ
m
Figure 29. Input Impedance
IC, COLLECTOR CURRENT (mA)
Figure 30. Voltage Feedback Ratio
IC, COLLECTOR CURRENT (mA)
30
100
50
10
20
2.0
3.0
5.0
7.0
10
1.0
0.1
0.2
1.0
2.0
5.0
0.5
10
0.3
0.5
3.0
0.7
2.0
5.0
10
7.0
20
1.0
0.7
0.2
0.5
h
i
0.1
0.2
1.0
2.0
5.0
10
0.3
0.5
3.0
0.1
0.2
1.0
2.0
5.0
10
0.3
0.5
3.0
7
5
0.1
0.2
1.0
2.0
5.0
10
0.3
0.5
3.0
70
30
0.7
7.0
0.7
7.0
3.0
0.3
0.7
7.0
0.7
7.0
h
r
-
(PNP)
(PNP)
(PNP)
(PNP)
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