- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377650 > LMBT5087LT1 (樂山無線電股份有限公司) Low Noise Transistor PDF資料下載
參數(shù)資料
| 型號： | LMBT5087LT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Low Noise Transistor |
| 中文描述： | 低噪聲晶體管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 150K |
| 代理商： | LMBT5087LT1 |
LESHAN RADIO COMPANY, LTD.
M17–2/6
L
MBT5087LT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS
DC Current Gain
(I
C
= –100
μ
Adc, V
CE
= –5.0 Vdc)
(I
C
= –1.0 mAdc, V
CE
= –5.0 Vdc)
(I
C
= –10 mAdc, V
CE
= –5.0 Vdc)
Collector–Emitter Saturation Voltage
(I
C
= –10 mAdc, I
B
= –1.0 mAdc)
Base–Emitter Saturation Voltage
(I
C
= –10 mAdc, I
B
= –1.0 mAdc)
Symbol
Min
Max
Unit
h
FE
––
250
250
250
800
––
––
V
CE(sat)
––
– 0.3
Vdc
V
BE(sat)
––
– 0.85
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I
C
= –500
μ
Adc, V
CE
= –5.0 Vdc, f = 20 MHz)
Output Capacitance
(V
CB
= –5.0 Vdc, I
E
= 0, f = 1.0 MHz)
Small–Signal Current Gain
(I
C
= –1.0mAdc, V
CE
= –5.0Vdc, f = 1.0 kHz)
Noise Figure
f
T
40
—
MHz
C
obo
—
4.0
pF
h
fe
250
900
—
N F
dB
(I
C
= –20 mAdc, V
CE
= –5.0 Vdc,R
s
=10k
, f = 1.0 kHz)
—
2.0
(I
C
= –100
μ
Adc, V
CE
= –5.0 Vdc,R
s
=3.0k
, f = 1.0 kHz)
—
2.0
相關PDF資料 |
PDF描述 |
|---|---|
| LMBT5087LT1G | Low Noise Transistor |
| LMBT5401LT1 | High Voltage Transistor |
| LMBT5401LT1G | High Voltage Transistor |
| LMBT5550LT1 | High Voltage Transistors |
| LMBT5550LT1G | High Voltage Transistors |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| LMBT5087LT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Low Noise Transistor |
| LMBT5087LT1G_11 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Low Noise Transistor PNP Silicon RoHS requirements. |
| LMBT5087LT3G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Low Noise Transistor PNP Silicon RoHS requirements. |
| LMBT5401DW1T1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| LMBT5401LT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:High Voltage Transistor |
發(fā)布緊急采購，3分鐘左右您將得到回復。