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參數(shù)資料
| 型號(hào)： | LMBT5087LT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Low Noise Transistor |
| 中文描述： | 低噪聲晶體管 |
| 文件頁(yè)數(shù)： | 5/6頁(yè) |
| 文件大?。?/td> | 150K |
| 代理商： | LMBT5087LT1 |
LESHAN RADIO COMPANY, LTD.
M17–5/6
TYPICAL DYNAMIC CHARACTERISTICS
C
I
C
, COLLECTOR CURRENT (mA)
Figure 10. Turn–On Time
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Turn–Off Time
I
C
, COLLECTOR CURRENT (mA)
Figure 12. Current–Gain — Bandwidth Product
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 13. Capacitance
t
t
f
T
,
V
CC
= 3.0 V
I
C
/I
B
= 10
T
J
= 25°C
t
d
@ V
BE(off)
= 0.5 V
t
r
V
CC
= –3.0 V
I
C
/I
B
= 10
I
B1
=I
B2
T
J
= 25°C
t
f
t
s
T
J
= 25°C
5.0 V
C
ib
C
ob
T
J
= 25°C
500
300
200
100
70
50
30
20
10
7.0
5.0
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
1000
700
500
300
200
100
70
50
30
20
10
–1.0
–2.0
–3.0
–5.0 –7.0 –10
–20
–30
–50
–70 –100
500
300
200
100
70
50
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
10.0
7.0
5.0
3.0
2.0
1.0
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
V
CE
=20 V
t, TIME (ms)
Figure 14. Thermal Response
r
D = 0.5
0.02
0.05
0.1
0.2
0.01
SINGLE PULSE
DUTY CYCLE, D = t
1
/ t
2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
(SEE AN–569)
Z
θ
JA(t)
= r(t) R
θ
JA
T
J(pk)
– T
A
= P
(pk)
Z
θ
JA(t)
FIGURE 16
P
(pk)
t
2
t
1
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0k
2.0k
5.0k
10k
20k
50k
100k
L
MBT5087LT1
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|---|---|
| LMBT5087LT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Low Noise Transistor |
| LMBT5087LT1G_11 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Low Noise Transistor PNP Silicon RoHS requirements. |
| LMBT5087LT3G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Low Noise Transistor PNP Silicon RoHS requirements. |
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| LMBT5401LT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:High Voltage Transistor |
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