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參數(shù)資料
| 型號： | LMBT5551LT1G |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | High Voltage Transistors |
| 中文描述： | 高壓晶體管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 118K |
| 代理商： | LMBT5551LT1G |
LESHAN RADIO COMPANY, LTD.
LMBT5550LT1–1/5
1
3
2
LMBT5550LT1
LMBT5551LT1
SOT–23
High Voltage Transistors
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V
CEO
140
Vdc
Collector–Base Voltage
V
CBO
160
Vdc
Emitter–Base Voltage
V
EBO
6.0
Vdc
Collector Current — Continuous
I
C
600
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
Max
Unit
P
D
225
mW
1.8
556
mW/°C
°C/W
R
θ
JA
P
D
300
mW
2.4
417
mW/°C
°C/W
°C
R
θ
JA
T
J
, T
stg
–55 to +150
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I
C
= 1.0 mAdc, I
B
= 0)
V
(BR)CEO
Vdc
LMBT5550
LMBT5551
140
160
—
—
Collector–Base Breakdown Voltage
(I
C
= 100
μ
Adc, I
E
= 0)
V
(BR)CBO
Vdc
LMBT5550
LMBT5551
160
180
—
—
Emitter–Base Breakdown Voltage
(I
E
= 10
μ
Adc, I
C
= 0)
Collector Cutoff Current
( V
CB
= 100Vdc, I
E
= 0)
( V
CB
= 120Vdc, I
E
= 0)
( V
CB
= 100Vdc, I
E
= 0, T
A
=100 °C)
( V
CB
= 120Vdc, I
E
= 0, T
A
=100 °C)
Emitter Cutoff Current
( V
BE
= 4.0Vdc, I
C
= 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width = 300
μ
s, Duty Cycle = 2.0%.
V
(BR)EBO
Vdc
6.0
—
I
CBO
LMBT5550
LMBT5551
LMBT5550
LMBT5551
—
—
—
—
100
50
100
50
nAdc
μ
Adc
I
EBO
—
50
nAdc
2
EMITTER
3
COLLECTOR
1
BASE
FEATURE
Pb-Free package is available.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LMBT5550LT1
M1F
3000/Tape&Reel
LMBT5550LT1G
(Pb-Free)
M1F
3000/Tape&Reel
LMBT5551LT1
G1
3000/Tape&Reel
LMBT5551LT1G
(Pb-Free)
G1
3000/Tape&Reel
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