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參數(shù)資料
| 型號： | LMBT5401LT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | High Voltage Transistor |
| 中文描述： | 高壓晶體管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 113K |
| 代理商： | LMBT5401LT1 |
LESHAN RADIO COMPANY, LTD.
LMBT5401LT1–2/5
LMBT5401LT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS (2)
DC Current Gain
(I
C
= –1.0mAdc, V
CE
= –5.0 Vdc)
(I
C
= –10 mAdc, V
CE
= –5.0 Vdc)
(I
C
= –50 mAdc, V
CE
= –5.0 Vdc)
Collector–Emitter Saturation Voltage
(I
C
= –10 mAdc, I
B
= –1.0 mAdc)
(I
C
= –50 mAdc, I
B
= –5.0 mAdc)
Base–Emitter Saturation Voltage
Symbol
Min
Max
Unit
h
FE
––
50
60
50
––
240
––
V
CE(sat)
Vdc
––
––
– 0.2
– 0.5
V
BE(sat)
Vdc
(I
C
= –10 mAdc, I
B
= –1.0 mAdc)
(I
C
= –50 mAdc, I
B
= –5.0 mAdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I
C
= –10 mAdc, V
CE
= –10 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= –10 Vdc, I
E
= 0, f = 1.0 MHz)
Small–Signal Current Gain
(I
C
= –1.0mAdc, V
CE
= –10Vdc, f = 1.0 kHz)
Noise Figure
––
– 1.0
––
– 1.0
f
T
MHz
100
300
C
obo
pF
––
6.0
h
fe
—
40
200
N F
dB
(I
C
= –200
μ
Adc, V
CE
= –5.0 Vdc,R
s
=10
, f = 1.0 kHz)
––
8.0
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