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參數(shù)資料
| 型號(hào)： | LMBT5551LT1G |
| 廠商： | 樂(lè)山無(wú)線電股份有限公司 |
| 英文描述： | High Voltage Transistors |
| 中文描述： | 高壓晶體管 |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大?。?/td> | 118K |
| 代理商： | LMBT5551LT1G |
LESHAN RADIO COMPANY, LTD.
LMBT5550LT1–4/5
LMBT5550LT1 LMBT5551LT1
C
obo
C
10.2 V
V
in
10 ms
INPUT PULSE
V
BB
R
B
5.1 k
0.25 mF
V
in
1N914
V
out
R
C
V
CC
30 V
3.0 k
t
r
, t
f
<
10 ns
DUTY CYCLE = 1.0%
t
Values Shown are for I
C
@ 10 mA
Figure 6. Switching Time Test Circuit
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Temperature Coefficients
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitances Figure
I
C
, COLLECTOR CURRENT (mA)
8. Turn–On Time
I
C
, COLLECTOR CURRENT (mA)
Figure 9. Turn–Off Time
t
θ
V
,
T
J
= 25°C
I
C
/I
B
= 10
T
J
= 25°C
t
r
@ V
CC
= 120 V
t
r
@ V
CC
= 30 V
t
d
@ V
EB(off)
= 1.0 V
V
CC
= 120 V
I
C
/I
B
= 10
T
J
= 25°C
t
f
@ V
CC
= 120 V
t
f
@ V
CC
= 30 V
t
s
@ V
CC
= 120 V
θ
VC
for V
CE(sat)
θ
VB
for V
BE(sat)
T
J
= –55°C to +135°C
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
50
100
2.5
2
1.5
1.0
0.5
0
–0.5
–1.0
–1.5
–2.0
–2.5
100
70
50
30
20
10
7.0
5.0
3.0
2.0
1.0
C
ibo
0.2
0.3
0.7 0.5 1.0
2.0
3.0
5.0 7.0
10
20
0.2 0.3 0.5
1.0
2.0 3.0
5.0
10
20 30
50
100
200
1000
500
300
200
100
50
30
20
10
0.2 0.3 0.5
1.0
2.0 3.0
5.0
10
20 30
50
100
200
5000
3000
2000
1000
500
300
200
100
50
100
–8.8 V
100
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|---|---|
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| LMBT6427LT1G_11 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Darlington Transistors NPN Silicon RoHS requirements. |
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