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參數(shù)資料
| 型號： | LP750SOT89 |
| 英文描述： | LOW NOISE, HIGH LINEARITY PACKAGED PHEMT |
| 中文描述： | 低噪聲，高線性包裝的PHEMT器件 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 49K |
| 代理商： | LP750SOT89 |
LP750P100
P
ACKAGED
0.5
W
ATT
P
OWER
PHEMT
Phone:
(408) 988-1845
Fax:
(408) 970-9950
http://
www.filtronicsolidstate.com
Revised:
03/02/01
Email:
sales@filss.com
RECOMMENDED CONTINUOUS OPERATING LIMITS
Parameter
Symbol
Nominal
Units
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
RF Input Power
Channel Operating Temperature
V
DS
V
GS
I
DS
P
IN
T
CH
T
STG
8
V
V
-1.2
0.8 I
DSS
150
150
mA
mW
°
C
°
C
Ambient Temperature
-20/50
Notes:
Device should be operated at or below Recommended Continuous Operating Limits for reliable performance.
ABSOLUTE RATINGS
Parameter
Symbol
Test Conditions
Min
Max
Units
Drain-Source Voltage
V
DS
V
GS
I
DS
I
G
P
IN
T
CH
T
STG
T
Ambient
= 22
±
3
°
C
T
Ambient
= 22
±
3
°
C
T
Ambient
= 22
±
3
°
C
T
Ambient
= 22
±
3
°
C
T
Ambient
= 22
±
3
°
C
T
Ambient
= 22
±
3
°
C
—
12
V
Gate-Source Voltage
-4
V
Drain-Source Current
200% I
DSS
35
mA
Gate Current
mA
RF Input Power
250
mW
Channel Operating Temperature
175
oC
Storage Temperature
-65
175
oC
Notes:
Even temporary operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage
to the device.
APPLICATIONS NOTES & DESIGN DATA
Applications Notes are available from your local Filtronic Sales Representative or directly from the
factory. Complete design data, including S-parameters, noise data, and large-signal models are
available on the Filtronic web site.
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly and,
testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control
measures can be found in MIL-STD-1686 and MIL-HDBK-263.
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