參數(shù)資料
型號: LRS1338A
廠商: Sharp Corporation
英文描述: Stacked Chip 8M Flash Memory and 2M SRAM
中文描述: 堆疊芯片800萬快閃記憶體以及2M SRAM
文件頁數(shù): 1/36頁
文件大?。?/td> 218K
代理商: LRS1338A
Data Sheet
1
LRS1338A
Stacked Chip
Data Sheet
8M Flash Memory and 2M SRAM
FEATURES
Flash memory and SRAM
Stacked die chip scale package
48-pin TSOP (TSOP48-P-1014) plastic package
Power supply: 2.7 V to 3.6 V
Operating temperature: -40°C to +85°C
Access time (MAX.):
– Flash memory: 120 ns
– SRAM: 85 ns
Operating current (MAX.):
– Flash memory
– Read: 25 mA (t
CYCLE
= 200 ns)
– Word write: 57 mA (F-V
CC
3.0 V)
– Block erase: 42 mA (F-V
CC
3.0 V)
– SRAM: 25 mA (t
CYCLE
= 200 ns)
Standby current
2
– Flash memory: 20 μA MAX. (F-CE
F-V
CC
- 0.2 V,
F-RP
0.2 V, F-V
PP
0.2 V)
– SRAM:
– 40 μA MAX. (S-CE
S-V
CC
- 0.2 V)
– 0.6 μA TYP. (T
A
= 25°C, S-V
CC
= 3 V,
S-CE
S-V
CC
- 0.2 V)
Fully static operation
Three-state output
NOTES:
1. Block erase and word write operations of flash memory with
T
A
< -30°C are not supported.
2. Total standby current is the summation of flash’s memory standby
current and SRAM’s one.
DESCRIPTION
The LRS1338A is a combination memory organized
as 524,288 × 16-bit flash memory and 262,144 × 8-bit
static RAM in one package. It is fabricated using silicon-
gate CMOS process technology.
PIN CONFIGURATION
Figure 1. LRS1338A Pin Configuration
LRS1338A-1
TOP VIEW
48-PIN TSOP
2
3
4
5
8
9
S-A
9
/F-A
8
S-OE
S-A
12
/F-A
11
S-A
11
/F-A
10
S-A
13
/F-A
12
S-A
14
/F-A
13
48
45
42
6
7
S-A
10
/F-A
9
47
46
I/O
14
S-CE
I/O
15
I/O
7
I/O
13
I/O
5
I/O
12
10
11
12
13
44
I/O
3
I/O
10
I/O
2
43
I/O
6
14
15
16
17
18
19
20
39
36
41
40
38
37
I/O
1
S-WE
I/O
8
I/O
0
F-OE
S-A
7
/F-A
6
S-A
6
/F-A
5
S-A
5
/F-A
4
S-A
4
/F-A
3
S-A
3
/F-A
2
S-A
8
/F-A
7
F-A18
F-A17
F-WP
I/O
4
F-V
CC
I/O
11
I/O
9
1
S-A
15
/F-A
14
S-A
16
/F-A
15
S-A
17
/F-A
16
21
22
23
24
S-A
0
S-A
2
/F-A
1
34
33
F-CE
35
GND
31
32
30
29
S-A
1
/F-A
0
F-RP
F-WE
F-V
PP
S-V
CC
27
28
26
25
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