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參數(shù)資料
| 型號： | LTC1255C |
| 廠商： | Linear Technology Corporation |
| 英文描述： | Dual 24V High-Side MOSFET Driver |
| 中文描述： | 雙24V的高邊MOSFET驅(qū)動器 |
| 文件頁數(shù)： | 7/16頁 |
| 文件大?。?/td> | 340K |
| 代理商： | LTC1255C |
7
LTC1255
APPLICATIU
MOSFET AND LOAD PROTECTION
The LTC1255 protects the power MOSFET switch by
removing drive from the gate as soon as an overcurrent
condition is detected. Resistive and inductive loads can be
protected with no external time delay in series with the
drain sense pin. Lamp loads, however, require that the
overcurrent protection be delayed long enough to start the
lamp but short enough to ensure the safety of the MOSFET.
W
U
U
Resistive Loads
Loads that are primarily resistive should be protected with
as short a delay as possible to minimize the amount of time
that the MOSFET is subjected to an overload condition.
The drain sense circuitry has a built-in delay of approxi-
mately 10
μ
s to eliminate false triggering by power supply
or load transient conditions. This delay is sufficient to
“mask” short load current transients and the starting of a
small capacitor (<1
μ
F) in parallel with the load. The drain
sense pin can therefore be connected directly to the drain
current sense resistor as shown in Figure 1.
V
S
DS1
1/2 LTC1255
G1
GND
IN1
IRFZ24
12V
18V
+
10
μ
F
R
LOAD
18
R
0.036
C
LOAD
≤
1
F
LTC1255 F01
Figure 1. Protecting Resistive Loads
Inductive Loads
Loads that are primarily inductive, such as relays, sole-
noids and stepper motor windings, should be protected
with as short a delay as possible to minimize the amount
of time that the MOSFET is subjected to an overload
condition. The built-in 10
μ
s delay will ensure that the
overcurrent protection is not false triggered by a supply or
load transient. No external delay components are required
as shown in Figure 2.
Large inductive loads (>0.1mH) may require diodes con-
nected directly across the inductor to safely divert the
stored energy to ground. Many inductive loads have these
diodes included. If not, a diode of the proper current rating
should be connected across the load, as shown in
Figure 2, to safely divert the stored energy.
Figure 2. Protecting Inductive Loads
Capacitive Loads
Large capacitive loads, such as complex electrical sys-
tems with large bypass capacitors, should be powered
using the circuit shown in Figure 3. The gate drive to the
power MOSFET is passed through an RC delay network,
R1 and C1, which greatly reduces the turn-on ramp rate of
the switch. And since the MOSFET source voltage follows
the gate voltage, the load is powered smoothly and slowly
from ground. This dramatically reduces the startup cur-
rent flowing into the supply capacitor(s) which, in turn,
reduces supply transients and allows for slower activation
Figure 3. Powering Large Capacitive Loads
V
S
DS1
1/2 LTC1255
G1
GND
IN1
IRFZ24
12V
12V
+
100
μ
F
12V, 1A
SOLENOID
R
0.036
1N5400
LTC1255 F02
V
S
DS1
1/2 LTC1255
G1
GND
IN1
MTP3055E
12V
15V
+
470
μ
F
R
0.036
LTC1255 F03
C
0.01
μ
F
R
100k
D1
1N4148
R1
100k
R2
100k
C1
0.33
μ
F
+
C
LOAD
100
μ
F
相關(guān)PDF資料 |
PDF描述 |
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| LTC1255 | Dual 24V High-Side MOSFET Driver |
| LTC1255I | Dual 24V High-Side MOSFET Driver |
| LTC1255CS8 | Dual 24V High-Side MOSFET Driver |
| LTC1255IN8 | Dual 24V High-Side MOSFET Driver |
| LTC1255IS8 | Dual 24V High-Side MOSFET Driver |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| LTC1255CN8 | 功能描述:IC MOSFET DVR HI-SIDE DUAL 8-DIP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標準包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應商設備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LTC1255CN8#PBF | 功能描述:IC MOSFET DVR HI-SIDE DUAL 8-DIP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標準包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應商設備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LTC1255CS8 | 功能描述:IC MOSFET DVR HI-SIDE DUAL 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標準包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應商設備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LTC1255CS8#PBF | 功能描述:IC MOSFET DVR HI-SIDE DUAL 8SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標準包裝:95 系列:- 配置:高端和低端，獨立 輸入類型:非反相 延遲時間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大（自引導啟動）:600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應商設備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁面:1381 (CN2011-ZH PDF) |
| LTC1255CS8#TR | 功能描述:IC DRVR MOSF DUAL 24V HISD 8SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標準包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應商設備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
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