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參數(shù)資料
| 型號： | LTE42005S |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN microwave power transistor |
| 中文描述： | C BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | METAL CERAMIC, SOT-440A, 3 PIN |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 52K |
| 代理商： | LTE42005S |
1997 Feb 21
6
Philips Semiconductors
Product specification
NPN microwave power transistor
LTE42005S
APPLICATION INFORMATION
Microwave performance up to T
mb
= 25
°
C in a common emitter class-A test circuit; note 1.
Notes
1.
2.
3.
4.
Circuit consists of prematching circuit boards in combination with complementary input and output slug tuners.
I
C
and V
CE
regulated.
Load power for 1 dB compressed power gain.
Low level power gain associated with P
L1
.
MODE OF OPERATION
f
(GHz)
V
CE
(V)
(2)
I
C
(mA)
(2)
P
L1
(mW)
(3)
≥
450 (26.5)
typ. 550 (27.4)
G
po
(dB)
(4)
≥
6.6
typ. 7.2
Z
i
(
)
Z
L
(
)
4 + j4
Class-A (CW)
4.2
18
110
100 + j40
Fig.4 Prematching test circuit board.
Dimensions in mm.
Input striplines on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (
ε
r
= 2.54); thickness: 1.6 mm.
Output striplines on a double copper-clad Rexolite printed-circuit board with dielectric (
ε
r
= 2.4); thickness: 0.25 mm.
handbook, full pagewidth
output
VSWR <3
z
0
= 50
input
VSWR <3
z
0
= 50
5
1
4.5
10
15.5
30
10.4
3
2
4
2.8
11.5
13
5.5
30
0.8
MSA097
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