參數(shù)資料
型號: LWE2010S
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: NPN microwave power transistor
中文描述: S BAND, Si, NPN, RF POWER TRANSISTOR
文件頁數(shù): 4/12頁
文件大?。?/td> 74K
代理商: LWE2010S
1997 Feb 19
4
Philips Semiconductors
Product specification
NPN microwave power transistor
LWE2010S
THERMAL CHARACTERISTICS
Note
1.
See “Mounting recommendations in the General part of handbook SC15”
CHARACTERISTICS
T
mb
= 25
°
C unless otherwise specified.
APPLICATION INFORMATION
Microwave performance up to T
mb
= 25
°
C in a common emitter class A selective amplifier.
Note
1.
In narrowband test circuit shown in Fig.4.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
R
th j-mb
R
th mb-h
thermal resistance from junction to mounting base T
j
= 75
°
C
thermal resistance from mounting base to heatsink note 1
22
2
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
μ
A
μ
A
nA
I
CBO
collector cut-off current
V
CB
= 20 V; I
E
= 0
V
CB
= 40 V; I
E
= 0
V
EB
= 1.5 V; I
C
= 0
V
CE
= 5 V; I
C
= 110 mA
15
75
500
200
150
I
EBO
h
FE
emitter cut-off current
DC current gain
MODE OF OPERATION
f
(GHz)
V
CE
(V)
I
C
(mA)
P
L1
(W)
0.8;
typ. 0.9
G
po
(dB)
8;
typ. 9
Z
I
(
)
Z
L
(
)
Class A (CW); note 1
2.3
18
110
5.2 + j 16.5
7.5 + j 8.75
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