參數(shù)資料
型號: M12L64322A-5BG
廠商: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類: DRAM
英文描述: 512K x 32 Bit x 4 Banks Synchronous DRAM
中文描述: 2M X 32 SYNCHRONOUS DRAM, 4.5 ns, PBGA90
封裝: 8 X 13 MM, LEAD FREE, BGA-90
文件頁數(shù): 12/47頁
文件大小: 791K
代理商: M12L64322A-5BG
ES MT
M12L64322A
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2007
Revision
:
2.3
12/47
BURST SEQUENCE (BURST LENGTH = 4)
Initial Address
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Sequential
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BURST SEQUENCE (BURST LENGTH = 8)
Initial
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Sequential
Interleave
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相關(guān)PDF資料
PDF描述
M12L64322A-5TG 512K x 32 Bit x 4 Banks Synchronous DRAM
M12L64322A-6BG 512K x 32 Bit x 4 Banks Synchronous DRAM
M12L64322A-6TG 512K x 32 Bit x 4 Banks Synchronous DRAM
M12L64322A-7BG 512K x 32 Bit x 4 Banks Synchronous DRAM
M12L64322A-7TG 512K x 32 Bit x 4 Banks Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M12L64322A-5BG2U 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks
M12L64322A-5TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks Synchronous DRAM
M12L64322A-5TG2U 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks
M12L64322A-6BG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks Synchronous DRAM
M12L64322A-6BG2U 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32 Bit x 4 Banks