參數(shù)資料
型號(hào)： M13S2561616A
廠(chǎng)商： Elite Semiconductor Memory Technology Inc.
英文描述： 4M x 16 Bit x 4 Banks Double Data Rate SDRAM
中文描述： 4米× 16位× 4個(gè)銀行雙倍數(shù)據(jù)速率SDRAM
文件頁(yè)數(shù)： 8/48頁(yè)
文件大?。?/td> 1232K
代理商： M13S2561616A
ES MT
M13S2561616A
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2007
Revision : 1.3 8/48
AC Timing Parameter & Specifications-continued
-4
-5
-6
Parameter
Symbol
min
max
min
max
min
max
ns
Half Clock Period
t
HP
t
CL
min or
t
CH
min
t
HP
-t
QHS
-
t
CL
min or
t
CH
min
t
HP
-t
QHS
-
t
CL
min or
t
CH
min
t
HP
-t
QHS
-
ns
DQ-DQS output hold time
t
QH
-
-
-
ns
ACTIVE to PRECHARGE
command
t
RAS
40
70K
40
70K
42
70K
ns
Row Cycle Time
t
RC
52
-
55
-
60
-
ns
AUTO REFRESH Row Cycle
Time
t
RFC
52
-
70
-
72
-
ns
ACTIVE to READ,WRITE
delay
t
RCD
15
-
15
-
18
-
ns
PRECHARGE command
period
t
RP
15
-
15
-
18
-
ns
ACTIVE to READ with
AUTOPRECHARGE
command
t
RAP
18
120K
18
120K
18
120K
ns
ACTIVE bank A to ACTIVE
bank B command
t
RRD
8
-
10
-
12
-
ns
Write recovery time
t
WR
15
-
15
-
15
-
t
CK
Write data in to READ
command delay
t
WTR
2
-
2
-
1
-
t
CK
Col. Address to Col. Address
delay
t
CCD
1
-
1
-
1
-
t
CK
Average periodic refresh
interval
t
REFI
-
7.8
-
7.8
-
7.8
us
Write preamble
t
WPRE
0.25
-
0.25
-
0.25
-
t
CK
Write postamble
t
WPST
0.4
0.6
0.4
0.6
0.4
0.6
t
CK
DQS read preamble
t
RPRE
0.9
1.1
0.9
1.1
0.9
1.1
t
CK
DQS read postamble
t
RPST
0.4
0.6
0.4
0.6
0.4
0.6
t
CK
Clock to DQS write preamble
setup time
t
WPRES
0
-
0
-
0
-
ns
Load Mode Register /
Extended Mode register
cycle time
t
MRD
2
-
2
-
1
-
t
CK
Exit self refresh to READ
command
t
XSRD
200
-
200
-
200
-
t
CK
Exit self refresh to
non-READ command
t
XSNR
75
-
75
-
75
-
ns
Autoprecharge write
recovery+Precharge time
t
DAL
30
-
30
-
-
30
ns
相關(guān)PDF資料
PDF描述
M13S2561616A-4TG 4M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S2561616A-5TG 4M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S2561616A-6TG 4M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S256328A 2M x 32 Bit x 4 Banks Double Data Rate SDRAM
M13S32321A 256K x 32 Bit x 4 Banks Double Data Rate SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M13S2561616A_09 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:4M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S2561616A_1 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:4M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S2561616A-4BG 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:4M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S2561616A-4TG 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:4M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S2561616A-5BG 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:4M x 16 Bit x 4 Banks Double Data Rate SDRAM
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