參數(shù)資料
型號(hào): M25P32
廠商: 意法半導(dǎo)體
元件分類: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門,串行閃存
文件頁(yè)數(shù): 37/48頁(yè)
文件大小: 386K
代理商: M25P32
M25P32
Initial delivery state
37/48
8
Initial delivery state
The device is delivered with the memory array erased: all bits are set to 1 (each byte
contains FFh). The Status Register contains 00h (all Status Register bits are 0).
9
Maximum rating
Stressing the device outside the ratings listed in
Table 9
may cause permanent damage to
the device. These are stress ratings only, and operation of the device at these, or any other
conditions outside those indicated in the Operating sections of this specification, is not
implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect
device reliability. Refer also to the STMicroelectronics SURE Program and other relevant
quality documents.
Table 9.
Absolute Maximum Ratings
Symbol
Parameter
Min.
Max.
Unit
T
STG
Storage Temperature
–65
150
°C
V
IO
Input and Output Voltage (with respect to Ground)
–0.6
4.0
V
V
CC
Supply Voltage
–0.6
4.0
V
V
PP
Fast Program/Erase Voltage
–0.2
10.0
V
V
ESD
Electrostatic Discharge Voltage (Human Body model)
(1)
1.
JEDEC Std JESD22-A114A (C1=100 pF, R1=1500 W, R2=500 W)
–2000
2000
V
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