參數(shù)資料
型號(hào)： M25P40-VMN6P
廠商： 意法半導(dǎo)體
元件分類(lèi)： DRAM
英文描述： 4 Mbit Uniform Sector, Serial Flash Memory
中文描述： 4兆位統(tǒng)一部門(mén)，串行閃存
文件頁(yè)數(shù)： 39/40頁(yè)
文件大小： 232K
代理商： M25P40-VMN6P
39/40
M25P40
REVISION HISTORY
Table 22. Document Revision History
Date
Rev.
Description of Revision
12-Apr-2001
1.0
Document written
25-May-2001
1.1
Serial Paged Flash Memory renamed as Serial Flash Memory
11-Sep-2001
1.2
Changes to text: Signal Description/Chip Select; Hold Condition/1st para; Protection modes;
Release from Power-down and Read Electronic Signature (RES); Power-up
Repositioning of several tables and illustrations without changing their contents
Power-up timing illustration; SO8W package removed
Changes to tables: Abs Max Ratings/V
IO
; DC Characteristics/V
IL
16-Jan-2002
1.3
FAST_READ instruction added. Document revised with new timings, V
WI
, I
CC3
and clock slew
rate. Descriptions of Polling, Hold Condition, Page Programming, Release for Deep Power-
down made more precise. Value of t
W
(max) modified.
12-Sep-2002
1.4
Clarification of descriptions of entering Stand-by Power mode from Deep Power-down mode,
and of terminating an instruction sequence or data-out sequence.
VFQFPN8 package (MLP8) added. Document promoted to Preliminary Data.
13-Dec-2002
1.5
Typical Page Program time improved. Deep Power-down current changed. Write Protect setup
and hold times specified, for applications that switch Write Protect to exit the Hardware
Protection mode immediately before a WRSR, and to enter the Hardware Protection mode
again immediately after.
12-Jun-2003
1.6
Document promoted from Preliminary Data to full Datasheet
24-Nov-2003
2.0
Table of contents, warning about exposed paddle on MLP8, and Pb-free options added.
40MHz AC Characteristics table included as well as 25MHz. I
CC3
(max), t
SE
(typ) and t
BE
(typ)
values improved. Change of naming for VDFPN8 package
12-Mar-2004
3.0
Automotive range added. Soldering temperature information clarified for RoHS compliant
devices
05-Aug-2004
4.0
Device Grade information clarified. Data-retention measurement temperature corrected.
Details of how to find the date of marking added.
相關(guān)PDF資料
PDF描述
M25P40-VMN6TG 4 Mbit Uniform Sector, Serial Flash Memory
M25P40-VMN6TP 4 Mbit Uniform Sector, Serial Flash Memory
M25P40-VMP3 4 Mbit Uniform Sector, Serial Flash Memory
M25P40-VMP3G 4 Mbit Uniform Sector, Serial Flash Memory
M25P40-VMP3P 4 Mbit Uniform Sector, Serial Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M25P40-VMN6P/X 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:4 Mbit, low voltage, serial Flash memory with 50 MHz SPI bus interface
M25P40-VMN6P_NUD 制造商:Micron Technology Inc 功能描述:
M25P40-VMN6PB 制造商:Micron Technology Inc 功能描述:NOR Flash Serial-SPI 2.5V/3.3V 4Mbit 512K x 8bit 8ns 8-Pin SO N Tube 制造商:Micron Technology Inc 功能描述:SERIAL FLASH 4MEG (M25P40) SO 0SO 08 .15 JEDEC (110NM) - Trays 制造商:Micron Technology Inc 功能描述:4MBIT SPI NOR FLASH 制造商:Micron Technology Inc 功能描述:IC FLASH 4MBIT 75MHZ 8SOIC 制造商:Micron Technology Inc 功能描述:FLASH SERIAL 4MBIT 8SOIC 制造商:Micron Technology Inc 功能描述:FLASH, SERIAL, 4MBIT, 8SOIC 制造商:Micron Technology Inc 功能描述:FLASH, SERIAL, 4MBIT, 8SOIC; Memory Type:Flash - NOR; Memory Size:4Mbit; Memory Configuration:512K x 8bit; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:NSOIC; No. of Pins:8; Clock Frequency:75MHz; Interface ;RoHS Compliant: Yes 制造商:Micron Technology 功能描述:NOR Flash Serial-SPI 2.5V/3.3V 4Mbit 512K x 8bit 8ns 8-Pin SO N Tube
M25P40-VMN6PBA 制造商:Micron Technology Inc 功能描述:NOR Flash Serial-SPI 2.5V/3.3V 4Mbit 512K x 8bit 8ns 8-Pin SO N Tray 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 4MX1 PBF SOIC 3.0V
M25P40-VMN6Pxx 制造商:MICRON 制造商全稱(chēng):Micron Technology 功能描述:Micron M25P40 Serial Flash Embedded Memory
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