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參數(shù)資料
| 型號(hào)： | M25P40-VMN6P |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁(yè)數(shù)： | 8/40頁(yè) |
| 文件大?。?/td> | 232K |
| 代理商： | M25P40-VMN6P |
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M25P40
8/40
OPERATING FEATURES
Page Programming
To program one data byte, two instructions are re-
quired: Write Enable (WREN), which is one byte,
and a Page Program (PP) sequence, which con-
sists of four bytes plus data. This is followed by the
internal Program cycle (of duration t
PP
).
To spread this overhead, the Page Program (PP)
instruction allows up to 256 bytes to be pro-
grammed at a time (changing bits from 1 to 0), pro-
vided that they lie in consecutive addresses on the
same page of memory.
Sector Erase and Bulk Erase
The Page Program (PP) instruction allows bits to
be reset from 1 to 0. Before this can be applied, the
bytes of memory need to have been erased to all
1s (FFh). This can be achieved either a sector at a
time, using the Sector Erase (SE) instruction, or
throughout the entire memory, using the Bulk
Erase (BE) instruction. This starts an internal
Erase cycle (of duration t
SE
or t
BE
).
The Erase instruction must be preceded by a Write
Enable (WREN) instruction.
Polling During a Write, Program or Erase Cycle
A further improvement in the time to Write Status
Register (WRSR), Program (PP) or Erase (SE or
BE) can be achieved by not waiting for the worst
case delay (t
W
, t
PP
, t
SE
, or t
BE
). The Write In
Progress (WIP) bit is provided in the Status Regis-
ter so that the application program can monitor its
value, polling it to establish when the previous
Write cycle, Program cycle or Erase cycle is com-
plete.
Active Power, Stand-by Power and Deep
Power-Down Modes
When Chip Select (S) is Low, the device is en-
abled, and in the Active Power mode.
When Chip Select (S) is High, the device is dis-
abled, but could remain in the Active Power mode
until all internal cycles have completed (Program,
Erase, Write Status Register). The device then
goes in to the Stand-by Power mode. The device
consumption drops to I
CC1
.
The Deep Power-down mode is entered when the
specific instruction (the Enter Deep Power-down
Mode (DP) instruction) is executed. The device
consumption drops further to I
CC2
. The device re-
mains in this mode until another specific instruc-
tion (the Release from Deep Power-down Mode
and Read Electronic Signature (RES) instruction)
is executed.
All other instructions are ignored while the device
is in the Deep Power-down mode. This can be
used as an extra software protection mechanism,
when the device is not in active use, to protect the
device from inadvertent Write, Program or Erase
instructions.
Status Register
The Status Register contains a number of status
and control bits that can be read or set (as appro-
priate) by specific instructions.
WIP bit.
The Write In Progress (WIP) bit indicates
whether the memory is busy with a Write Status
Register, Program or Erase cycle.
WEL bit.
The Write Enable Latch (WEL) bit indi-
cates the status of the internal Write Enable Latch.
BP2, BP1, BP0 bits.
The Block Protect (BP2,
BP1, BP0) bits are non-volatile. They define the
size of the area to be software protected against
Program and Erase instructions.
SRWD bit.
The Status Register Write Disable
(SRWD) bit is operated in conjunction with the
Write Protect (W) signal. The Status Register
Write Disable (SRWD) bit and Write Protect (W)
signal allow the device to be put in the Hardware
Protected mode. In this mode, the non-volatile bits
of the Status Register (SRWD, BP2, BP1, BP0)
become read-only bits.
相關(guān)PDF資料 |
PDF描述 |
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| M25P40-VMN6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40-VMN6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40-VMP3 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40-VMP3G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40-VMP3P | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25P40-VMN6P/X | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:4 Mbit, low voltage, serial Flash memory with 50 MHz SPI bus interface |
| M25P40-VMN6P_NUD | 制造商:Micron Technology Inc 功能描述: |
| M25P40-VMN6PB | 制造商:Micron Technology Inc 功能描述:NOR Flash Serial-SPI 2.5V/3.3V 4Mbit 512K x 8bit 8ns 8-Pin SO N Tube 制造商:Micron Technology Inc 功能描述:SERIAL FLASH 4MEG (M25P40) SO 0SO 08 .15 JEDEC (110NM) - Trays 制造商:Micron Technology Inc 功能描述:4MBIT SPI NOR FLASH 制造商:Micron Technology Inc 功能描述:IC FLASH 4MBIT 75MHZ 8SOIC 制造商:Micron Technology Inc 功能描述:FLASH SERIAL 4MBIT 8SOIC 制造商:Micron Technology Inc 功能描述:FLASH, SERIAL, 4MBIT, 8SOIC 制造商:Micron Technology Inc 功能描述:FLASH, SERIAL, 4MBIT, 8SOIC; Memory Type:Flash - NOR; Memory Size:4Mbit; Memory Configuration:512K x 8bit; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:NSOIC; No. of Pins:8; Clock Frequency:75MHz; Interface ;RoHS Compliant: Yes 制造商:Micron Technology 功能描述:NOR Flash Serial-SPI 2.5V/3.3V 4Mbit 512K x 8bit 8ns 8-Pin SO N Tube |
| M25P40-VMN6PBA | 制造商:Micron Technology Inc 功能描述:NOR Flash Serial-SPI 2.5V/3.3V 4Mbit 512K x 8bit 8ns 8-Pin SO N Tray 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 4MX1 PBF SOIC 3.0V |
| M25P40-VMN6Pxx | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:Micron M25P40 Serial Flash Embedded Memory |
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