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參數(shù)資料
| 型號： | M25P64-VME6G |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 22/38頁 |
| 文件大?。?/td> | 519K |
| 代理商： | M25P64-VME6G |
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M25P64
22/38
Page Program (PP)
The Page Program (PP) instruction allows bytes to
be programmed in the memory (changing bits from
1 to 0). Before it can be accepted, a Write Enable
(WREN) instruction must previously have been ex-
ecuted. After the Write Enable (WREN) instruction
has been decoded, the device sets the Write En-
able Latch (WEL).
The Page Program (PP) instruction is entered by
driving Chip Select (S) Low, followed by the in-
struction code, three address bytes and at least
one data byte on Serial Data Input (D). If the 8
least significant address bits (A7-A0) are not all
zero, all transmitted data that goes beyond the end
of the current page are programmed from the start
address of the same page (from the address
whose 8 least significant bits (A7-A0) are all zero).
Chip Select (S) must be driven Low for the entire
duration of the sequence.
The instruction sequence is shown in
Figure 16.
.
If more than 256 bytes are sent to the device, pre-
viously latched data are discarded and the last 256
data bytes are guaranteed to be programmed cor-
rectly within the same page. If less than 256 Data
bytes are sent to device, they are correctly pro-
grammed at the requested addresses without hav-
ing any effects on the other bytes of the same
page.
Chip Select (S) must be driven High after the
eighth bit of the last data byte has been latched in,
otherwise the Page Program (PP) instruction is not
executed.
As soon as Chip Select (S) is driven High, the self-
timed Page Program cycle (whose duration is t
PP
)
is initiated. While the Page Program cycle is in
progress, the Status Register may be read to
check the value of the Write In Progress (WIP) bit.
The Write In Progress (WIP) bit is 1 during the self-
timed Page Program cycle, and is 0 when it is
completed. At some unspecified time before the
cycle is completed, the Write Enable Latch (WEL)
bit is reset.
A Page Program (PP) instruction applied to a page
which is protected by the Block Protect (BP2, BP1,
BP0) bits (see
Table 2.
and
Table 3.
) is not execut-
ed.
Figure 16. Page Program (PP) Instruction Sequence
C
D
AI04082B
S
42
41
43 44 45 46 47 48 49 50
52 53 54 55
40
C
D
S
23
2
1
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35
22 21
3
2
1
0
36 37 38
Instruction
24-Bit Address
0
7
6
5
4
3
2
0
1
Data Byte 1
39
51
7
6
5
4
3
2
0
1
Data Byte 2
7
6
5
4
3
2
0
1
Data Byte 3
Data Byte 256
2
2
2
2
2
2
2
7
6
5
4
3
2
0
1
2
MSB
MSB
MSB
MSB
MSB
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M25P64-VMF6T | 16-Bit Bus Transceiver And Register With 3-State Outputs 56-SSOP -40 to 85 |
| M25P64-VMF6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P64-VMF6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P64-VMF6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE80-VMP6G | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25P64-VME6P | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:64 Mbit, low voltage, Serial Flash memory with 50 MHz SPI bus interface |
| M25P64-VME6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface |
| M25P64-VME6TG | 功能描述:閃存 SERIAL FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M25P64-VME6TP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface |
| M25P64-VMF3PB | 制造商:Micron Technology Inc 功能描述:NOR Flash Serial-SPI 3.3V 64Mbit 8M x 8bit 8ns 16-Pin SOIC W Tray 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 64MBIT 75MHZ 16SO |
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