參數(shù)資料
型號: M25P64-VME6G
廠商: 意法半導體
元件分類: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門,串行閃存
文件頁數(shù): 27/38頁
文件大?。?/td> 519K
代理商: M25P64-VME6G
27/38
M25P64
Table 8. Power-Up Timing and V
WI
Threshold
Symbol
Note: 1. These parameters are characterized only.
INITIAL DELIVERY STATE
The device is delivered with the memory array
erased: all bits are set to 1 (each byte contains
FFh). The Status Register contains 00h (all Status
Register bits are 0).
Parameter
Min.
Max.
Unit
t
VSL(1)
V
CC
(min) to S low
30
μs
t
PUW(1)
Time delay to Write instruction
1
10
ms
V
WI(1)
Write Inhibit Voltage
1.5
2.5
V
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