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參數(shù)資料
| 型號： | M25P64-VME6G |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 25/38頁 |
| 文件大?。?/td> | 519K |
| 代理商： | M25P64-VME6G |
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M25P64
Read Electronic Signature (RES)
The instruction is used to read, on Serial Data Out-
put (Q), the old-style 8-bit Electronic Signature,
whose value for the M25P64is 16h.
Please note that this is not the same as, or even a
subset of, the JEDEC 16-bit Electronic Signature
that is read by the Read Identifier (RDID) instruc-
tion. The old-style Electronic Signature is support-
ed for reasons of backward compatibility, only, and
should not be used for new designs. New designs
should, instead, make use of the JEDEC 16-bit
Electronic Signature, and the Read Identifier
(RDID) instruction.
The device is first selected by driving Chip Select
(S) Low. The instruction code is followed by 3
dummy bytes, each bit being latched-in on Serial
Data Input (D) during the rising edge of Serial
Clock (C). Then, the old-style 8-bit Electronic Sig-
nature, stored in the memory, is shifted out on Se-
rial Data Output (Q), each bit being shifted out
during the falling edge of Serial Clock (C).
The instruction sequence is shown in
Figure 19.
The Read Electronic Signature (RES) instruction
is terminated by driving Chip Select (S) High after
the Electronic Signature has been read at least
once. Sending additional clock cycles on Serial
Clock (C), while Chip Select (S) is driven Low,
cause the Electronic Signature to be output re-
peatedly.
When Chip Select (S) is driven High, the device is
put in the Standby Power mode. Once in the
Standby Power mode, the device waits to be se-
lected, so that it can receive, decode and execute
instructions.
Driving Chip Select (S) High after the 8
-
bit instruc-
tion byte has been received by the device, but be-
fore the whole of the 8-bit Electronic Signature has
been transmitted for the first time, still ensures that
the device is put into Standby Power mode. Once
in the Standby Power mode, the device waits to be
selected, so that it can receive, decode and exe-
cute instructions.
Figure 19. Read Electronic Signature (RES) Instruction Sequence and Data-Out Sequence
Note: The value of the 8-bit Electronic Signature, for the M25P64, is 16h.
C
D
AI04047C
S
Q
23
2
1
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35
22 21
3
2
1
0
36 37 38
7
6
5
4
3
2
0
1
High Impedance
Electronic Signature Out
Instruction
3 Dummy Bytes
0
MSB
MSB
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M25P64-VMF6T | 16-Bit Bus Transceiver And Register With 3-State Outputs 56-SSOP -40 to 85 |
| M25P64-VMF6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P64-VMF6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P64-VMF6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE80-VMP6G | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25P64-VME6P | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:64 Mbit, low voltage, Serial Flash memory with 50 MHz SPI bus interface |
| M25P64-VME6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface |
| M25P64-VME6TG | 功能描述:閃存 SERIAL FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M25P64-VME6TP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface |
| M25P64-VMF3PB | 制造商:Micron Technology Inc 功能描述:NOR Flash Serial-SPI 3.3V 64Mbit 8M x 8bit 8ns 16-Pin SOIC W Tray 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 64MBIT 75MHZ 16SO |
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