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參數(shù)資料
| 型號： | M25PE10-VMN6G |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 41/60頁 |
| 文件大?。?/td> | 310K |
| 代理商： | M25PE10-VMN6G |
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M25PE20, M25PE10
Instructions
41/60
6.15
Bulk Erase (BE)
Note:
The Bulk Erase (BE) instruction is decoded only in the T9HX process (see
Important note
on page 6
).
The Bulk Erase (BE) instruction sets all bits to 1 (FFh). Before it can be accepted, a Write
Enable (WREN) instruction must previously have been executed. After the Write Enable
(WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL).
The Bulk Erase (BE) instruction is entered by driving Chip Select (S) Low, followed by the
instruction code on Serial Data Input (D). Chip Select (S) must be driven Low for the entire
duration of the sequence.
The instruction sequence is shown in
Figure 22
.
Chip Select (S) must be driven High after the eighth bit of the instruction code has been
latched in, otherwise the Bulk Erase instruction is not executed. As soon as Chip Select (S)
is driven High, the self-timed Bulk Erase cycle (whose duration is t
BE
) is initiated. While the
Bulk Erase cycle is in progress, the Status Register may be read to check the value of the
Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Bulk
Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is
completed, the Write Enable Latch (WEL) bit is reset.
Any Bulk Erase (BE) instruction, while an Erase, Program or Write cycle is in progress, is
rejected without having any effects on the cycle that is in progress. A Bulk Erase (BE)
instruction is ignored if at least one sector or subsector is write-protected (Hardware or
Software protection).
If Reset (Reset) is driven Low while a Bulk Erase (BE) cycle is in progress, the Bulk Erase
cycle is interrupted and data may not be erased correctly (see
Table 14: Device status after
a Reset Low pulse
). On Reset going Low, the device enters the Reset mode and a time of
t
RHSL
is then required before the device can be re-selected by driving Chip Select (S) Low.
For the value of t
RHSL
see
Table 24: Timings after a Reset Low pulse
in
Section 11: DC and
AC parameters
.
Figure 22.
Bulk Erase (BE) instruction sequence
C
D
AI03752D
S
2
1
3
4
5
6
7
0
Instruction
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M25PE20-VMP6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE10-VMN6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE10-VMP6G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE10-VMP6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE10-VMP6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25PE10-VMN6P | 功能描述:閃存 SERIAL PAGE ERASE FLASH 1MBIT DATAS RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M25PE10-VMN6TG | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout |
| M25PE10-VMN6TP | 功能描述:電可擦除可編程只讀存儲器 SERIAL PAGE ERASE FLASH 1 Mbit Datas RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| M25PE10-VMN6TPBA | 制造商:Micron Technology Inc 功能描述:SERIAL NOR 制造商:Micron Technology Inc 功能描述:NOR Flash Serial-SPI 3V/3.3V 1Mbit 128K x 8bit 8ns T/R 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Tape and Reel |
| M25PE10-VMN6TPBA TR | 制造商:Micron Technology Inc 功能描述:IC FLASH 1MBIT 75MHZ 8SO |
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