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參數(shù)資料
| 型號： | M25PE10-VMN6G |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 8/60頁 |
| 文件大?。?/td> | 310K |
| 代理商： | M25PE10-VMN6G |
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Signal description
M25PE20, M25PE10
8/60
2
Signal description
2.1
Serial Data Output (Q)
This output signal is used to transfer data serially out of the device. Data is shifted out on the
falling edge of Serial Clock (C).
2.2
Serial Data Input (D)
This input signal is used to transfer data serially into the device. It receives instructions,
addresses, and the data to be programmed. Values are latched on the rising edge of Serial
Clock (C).
2.3
Serial Clock (C)
This input signal provides the timing of the serial interface. Instructions, addresses, or data
present at Serial Data Input (D) are latched on the rising edge of Serial Clock (C). Data on
Serial Data Output (Q) changes after the falling edge of Serial Clock (C).
2.4
Chip Select (S)
When this input signal is High, the device is deselected and Serial Data Output (Q) is at high
impedance. Unless an internal Read, Program, Erase or Write cycle is in progress, the
device will be in the Standby Power mode (this is not the Deep Power-down mode). Driving
Chip Select (S) Low selects the device, placing it in the Active Power mode.
After Power-up, a falling edge on Chip Select (S) is required prior to the start of any
instruction.
2.5
Reset (Reset)
The Reset (Reset) input provides a hardware reset for the memory.
When Reset (Reset) is driven High, the memory is in the normal operating mode. When
Reset (Reset) is driven Low, the memory will enter the Reset mode. In this mode, the output
is high impedance.
Driving Reset (Reset) Low while an internal operation is in progress will affect this operation
(write, program or erase cycle) and data may be lost.
2.6
Top Sector Lock (TSL)
This input signal puts the device in the Hardware Protected mode, when Top Sector Lock
(TSL) is connected to V
SS
, causing the top 256 pages (upper addresses) of the memory to
become read-only (protected from write, program and erase operations).
When Top Sector Lock (TSL) is connected to V
CC
, the top 256 pages of memory behave like
the other pages of memory.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M25PE20-VMP6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE10-VMN6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE10-VMP6G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE10-VMP6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE10-VMP6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25PE10-VMN6P | 功能描述:閃存 SERIAL PAGE ERASE FLASH 1MBIT DATAS RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M25PE10-VMN6TG | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout |
| M25PE10-VMN6TP | 功能描述:電可擦除可編程只讀存儲器 SERIAL PAGE ERASE FLASH 1 Mbit Datas RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| M25PE10-VMN6TPBA | 制造商:Micron Technology Inc 功能描述:SERIAL NOR 制造商:Micron Technology Inc 功能描述:NOR Flash Serial-SPI 3V/3.3V 1Mbit 128K x 8bit 8ns T/R 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Tape and Reel |
| M25PE10-VMN6TPBA TR | 制造商:Micron Technology Inc 功能描述:IC FLASH 1MBIT 75MHZ 8SO |
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