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參數(shù)資料
| 型號： | M25PE10-VMN6TG |
| 廠商： | 意法半導體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 20/37頁 |
| 文件大?。?/td> | 198K |
| 代理商： | M25PE10-VMN6TG |
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M25PE10, M25PE20
20/37
Page Erase (PE)
The Page Erase (PE) instruction sets to 1 (FFh) all
bits inside the chosen page. Before it can be ac-
cepted, a Write Enable (WREN) instruction must
previously have been executed. After the Write
Enable (WREN) instruction has been decoded,
the device sets the Write Enable Latch (WEL).
The Page Erase (PE) instruction is entered by
driving Chip Select (S) Low, followed by the in-
struction code, and three address Bytes on Serial
Data Input (D). Any address inside the Page is a
valid address for the Page Erase (PE) instruction.
Chip Select (S) must be driven Low for the entire
duration of the sequence.
The instruction sequence is shown in
Figure 16.
Chip Select (S) must be driven High after the
eighth bit of the last address Byte has been
latched in, otherwise the Page Erase (PE) instruc-
tion is not executed. As soon as Chip Select (S) is
driven High, the self-timed Page Erase cycle
(whose duration is t
PE
) is initiated. While the Page
Erase cycle is in progress, the Status Register
may be read to check the value of the Write In
Progress (WIP) bit. The Write In Progress (WIP)
bit is 1 during the self-timed Page Erase cycle, and
is 0 when it is completed. At some unspecified
time before the cycle is complete, the Write Enable
Latch (WEL) bit is reset.
A Page Erase (PE) instruction applied to a page
that is Hardware Protected is not executed.
Any Page Erase (PE) instruction, while an Erase,
Program or Write cycle is in progress, is rejected
without having any effects on the cycle that is in
progress.
Figure 16. Page Erase (PE)
Instruction Sequence
Note: Address bits A23 to A18 are Don’t Care in the M25PE20. Address bits A23 to A17 are Don’t Care in the M25PE10.
24 Bit Address
C
D
AI04046
S
2
1
3
4
5
6
7
8
9
29 30 31
Instruction
0
23 22
2
0
1
MSB
相關PDF資料 |
PDF描述 |
|---|---|
| M25PE10-VMN6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE20 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE16 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE16-VMP6G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE16-VMP6P | 4 Mbit Uniform Sector, Serial Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M25PE10-VMN6TP | 功能描述:電可擦除可編程只讀存儲器 SERIAL PAGE ERASE FLASH 1 Mbit Datas RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| M25PE10-VMN6TPBA | 制造商:Micron Technology Inc 功能描述:SERIAL NOR 制造商:Micron Technology Inc 功能描述:NOR Flash Serial-SPI 3V/3.3V 1Mbit 128K x 8bit 8ns T/R 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Tape and Reel |
| M25PE10-VMN6TPBA TR | 制造商:Micron Technology Inc 功能描述:IC FLASH 1MBIT 75MHZ 8SO |
| M25PE10-VMP6G | 制造商:Micron Technology Inc 功能描述:FLASH SERL-SPI 3.3V 1MBIT 128KX8 8NS 8PIN VDFPN EP - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 1MBIT 75MHZ 8VFQFPN |
| M25PE10-VMP6P | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout |
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