參數(shù)資料
型號: M25PE10-VMN6TG
廠商: 意法半導體
元件分類: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門,串行閃存
文件頁數(shù): 26/37頁
文件大?。?/td> 198K
代理商: M25PE10-VMN6TG
M25PE10, M25PE20
26/37
DC AND AC PARAMETERS
This section summarizes the operating and mea-
surement conditions, and the DC and AC charac-
teristics of the devices. The parameters in the DC
and AC Characteristic tables that follow are de-
rived from tests performed under the Measure-
ment Conditions summarized in the relevant
tables. Designers should check that the operating
conditions in their circuit match the measurement
conditions when relying on the quoted parame-
ters.
Table 9. Operating Conditions
Table 10. AC Measurement Conditions
Note: Output Hi-Z is defined as the point where data out is no longer driven.
Figure 21. AC Measurement I/O Waveform
Table 11. Capacitance
Symbol
Note: Sampled only, not 100% tested, at T
A
=25°C and a frequency of 20 MHz.
Symbol
Parameter
Min.
Max.
Unit
V
CC
Supply Voltage
2.7
3.6
V
T
A
Ambient Operating Temperature
–40
85
°C
Symbol
Parameter
Min.
Max.
Unit
C
L
Load Capacitance
30
pF
Input Rise and Fall Times
5
ns
Input Pulse Voltages
0.2V
CC
to 0.8V
CC
V
Input and Output Timing Reference Voltages
0.3V
CC
to 0.7V
CC
V
Parameter
Test Condition
Min.
Max.
Unit
C
OUT
Output Capacitance (Q)
V
OUT
= 0V
8
pF
C
IN
Input Capacitance (other pins)
V
IN
= 0V
6
pF
AI00825B
0.8VCC
0.2VCC
0.7VCC
0.3VCC
Input and Output
Timing Reference Levels
Input Levels
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