參數(shù)資料
型號： M25PE10-VMP6G
廠商： 意法半導(dǎo)體
元件分類： DRAM
英文描述： 4 Mbit Uniform Sector, Serial Flash Memory
中文描述： 4兆位統(tǒng)一部門，串行閃存
文件頁數(shù)： 52/60頁
文件大?。?/td> 310K
代理商： M25PE10-VMP6G
DC and AC parameters
M25PE20, M25PE10
52/60
AC characteristics (50 MHz operation,
T9HX (0.11μm) process
(1)
)
(2)
(3)
Table 22.
Test conditions specified in
Table 16
and
Table 17
Symbol
Alt.
Parameter
Min.
Typ.
Max.
Unit
f
C
f
C
Clock Frequency for the following instructions:
FAST_READ, RDLR, PW, PP, WRLR, PE, SE,
SSE, DP, RDP, WREN, WRDI, RDSR, WRSR
D.C.
50
MHz
f
R
Clock Frequency for READ instructions
D.C.
33
MHz
t
CH(4)
t
CL(4)
t
CLH
t
CLL
Clock High Time
9
ns
Clock Low Time
Clock Slew Rate
2
(peak to peak)
S Active Setup Time (relative to C)
9
ns
0.1
V/ns
t
SLCH
t
CHSL
t
DVCH
t
CHDX
t
CHSH
t
SHCH
t
SHSL
t
SHQZ(5)
t
CLQV
t
CLQX
t
WHSL(6)
t
SHWL(6)
t
DP(5)
t
RDP(5)
t
W
t
PW(7)
t
CSS
5
ns
S Not Active Hold Time (relative to C)
5
ns
t
DSU
t
DH
Data In Setup Time
2
ns
Data In Hold Time
5
ns
S Active Hold Time (relative to C)
5
ns
S Not Active Setup Time (relative to C)
5
ns
t
CSH
t
DIS
t
V
t
HO
S Deselect Time
100
ns
Output Disable Time
8
ns
Clock Low to Output Valid
8
ns
Output Hold Time
0
ns
Write Protect Setup Time
50
ns
Write Protect Hold Time
100
ns
S to Deep Power-down
3
μs
S High to Standby Mode
30
μs
Write Status Register Cycle Time
3
15
ms
Page Write Cycle Time (256 bytes)
11
23
ms
t
PP(7)
Page Program Cycle Time (256 bytes)
0.8
3
ms
Page Program Cycle Time (n bytes)
int(n/8) × 0.025
(8)
t
PE
t
SE
t
SSE
t
BE
Page Erase Cycle Time
10
20
ms
Sector Erase Cycle Time
1
5
s
SubSector Erase Cycle Time
40
150
ms
Bulk Erase Cycle Time
4.5
10
s
1.
See
Important note on page 6
.
2.
Preliminary data.
3.
Details of how to find the Technology Process in the marking are given in AN1995, see also
Section 13: Part numbering
.
4.
t
CH
+ t
CL
must be greater than or equal to 1/ f
C
Value guaranteed by characterization, not 100% tested in production.
5.
6.
Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
7.
When using PP and PW instructions to update consecutive bytes, optimized timings are obtained with one sequence
including all the bytes versus several sequences of only a few bytes (1
≤
n
≤
256).
int(A) corresponds to the upper integer part of A. E.g. int(12/8) = 2, int(32/8) = 4 int(15.3) =16.
8.
相關(guān)PDF資料
PDF描述
M25PE10-VMP6P 4 Mbit Uniform Sector, Serial Flash Memory
M25PE10-VMP6TG 4 Mbit Uniform Sector, Serial Flash Memory
M25PE10-VMP6TP 4 Mbit Uniform Sector, Serial Flash Memory
M25PE20_07 4 Mbit Uniform Sector, Serial Flash Memory
M25PE20-VMN6G 4 Mbit Uniform Sector, Serial Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M25PE10-VMP6P 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout
M25PE10-VMP6TG 功能描述:IC FLASH 1MBIT 75MHZ 8VFQFPN RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:Forté™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ
M25PE10-VMP6TP 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout
M25PE16 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout
M25PE16-VMP6G 功能描述:閃存 16 Mbit Lo Vltg Page Erasable Seral 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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