參數(shù)資料
型號(hào)： M25PE10-VMP6G
廠商： 意法半導(dǎo)體
元件分類(lèi)： DRAM
英文描述： 4 Mbit Uniform Sector, Serial Flash Memory
中文描述： 4兆位統(tǒng)一部門(mén)，串行閃存
文件頁(yè)數(shù)： 8/60頁(yè)
文件大小： 310K
代理商： M25PE10-VMP6G
Signal description
M25PE20, M25PE10
8/60
2
Signal description
2.1
Serial Data Output (Q)
This output signal is used to transfer data serially out of the device. Data is shifted out on the
falling edge of Serial Clock (C).
2.2
Serial Data Input (D)
This input signal is used to transfer data serially into the device. It receives instructions,
addresses, and the data to be programmed. Values are latched on the rising edge of Serial
Clock (C).
2.3
Serial Clock (C)
This input signal provides the timing of the serial interface. Instructions, addresses, or data
present at Serial Data Input (D) are latched on the rising edge of Serial Clock (C). Data on
Serial Data Output (Q) changes after the falling edge of Serial Clock (C).
2.4
Chip Select (S)
When this input signal is High, the device is deselected and Serial Data Output (Q) is at high
impedance. Unless an internal Read, Program, Erase or Write cycle is in progress, the
device will be in the Standby Power mode (this is not the Deep Power-down mode). Driving
Chip Select (S) Low selects the device, placing it in the Active Power mode.
After Power-up, a falling edge on Chip Select (S) is required prior to the start of any
instruction.
2.5
Reset (Reset)
The Reset (Reset) input provides a hardware reset for the memory.
When Reset (Reset) is driven High, the memory is in the normal operating mode. When
Reset (Reset) is driven Low, the memory will enter the Reset mode. In this mode, the output
is high impedance.
Driving Reset (Reset) Low while an internal operation is in progress will affect this operation
(write, program or erase cycle) and data may be lost.
2.6
Top Sector Lock (TSL)
This input signal puts the device in the Hardware Protected mode, when Top Sector Lock
(TSL) is connected to V
SS
, causing the top 256 pages (upper addresses) of the memory to
become read-only (protected from write, program and erase operations).
When Top Sector Lock (TSL) is connected to V
CC
, the top 256 pages of memory behave like
the other pages of memory.
相關(guān)PDF資料
PDF描述
M25PE10-VMP6P 4 Mbit Uniform Sector, Serial Flash Memory
M25PE10-VMP6TG 4 Mbit Uniform Sector, Serial Flash Memory
M25PE10-VMP6TP 4 Mbit Uniform Sector, Serial Flash Memory
M25PE20_07 4 Mbit Uniform Sector, Serial Flash Memory
M25PE20-VMN6G 4 Mbit Uniform Sector, Serial Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M25PE10-VMP6P 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout
M25PE10-VMP6TG 功能描述:IC FLASH 1MBIT 75MHZ 8VFQFPN RoHS:是 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:Forté™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類(lèi)型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤(pán) 其它名稱(chēng):71P71804S200BQ
M25PE10-VMP6TP 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout
M25PE16 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout
M25PE16-VMP6G 功能描述:閃存 16 Mbit Lo Vltg Page Erasable Seral 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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