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參數(shù)資料
| 型號(hào)： | M25PE20-VMP6G |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 21/60頁 |
| 文件大?。?/td> | 310K |
| 代理商： | M25PE20-VMP6G |
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M25PE20, M25PE10
Instructions
21/60
6
Instructions
All instructions, addresses and data are shifted in and out of the device, most significant bit
first.
Serial Data Input (D) is sampled on the first rising edge of Serial Clock (C) after Chip Select
(S) is driven Low. Then, the one-Byte instruction code must be shifted in to the device, most
significant bit first, on Serial Data Input (D), each bit being latched on the rising edges of
Serial Clock (C).
The instruction set is listed in
Table 7
.
Every instruction sequence starts with a one-Byte instruction code. Depending on the
instruction, this might be followed by address Bytes, or by data Bytes, or by both or none.
In the case of a Read Data Bytes (READ), Read Data Bytes at Higher Speed (Fast_Read),
Read Status Register (RDSR) or Read to Lock Register (RDLR) instruction, the shifted-in
instruction sequence is followed by a data-out sequence. Chip Select (S) can be driven High
after any bit of the data-out sequence is being shifted out.
In the case of a Page Write (PW), Page Program (PP), Page Erase (PE), SubSector Erase
(SSE), Sector Erase (SE), Bulk Erase (BE), Write Enable (WREN), Write Disable (WRDI),
Write Status Register (WRSR), Write to Lock Register (WRLR), Deep Power-down (DP) or
Release from Deep Power-down (RDP) instruction, Chip Select (S) must be driven High
exactly at a byte boundary, otherwise the instruction is rejected, and is not executed. That is,
Chip Select (S) must driven High when the number of clock pulses after Chip Select (S)
being driven Low is an exact multiple of eight.
All attempts to access the memory array during a Write cycle, Program cycle or Erase cycle
are ignored, and the internal Write cycle, Program cycle or Erase cycle continues
unaffected.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M25PE20-VMP6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE20-VMP6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE10-VMN6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE10-VMN6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE20 | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25PE20-VMP6P | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout |
| M25PE20-VMP6TG | 功能描述:IC FLASH 2MBIT 75MHZ 8VFQFPN RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:Forté™ 標(biāo)準(zhǔn)包裝:2,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:256K (32K x 8) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:28-TSSOP（0.465"，11.8mm 寬） 供應(yīng)商設(shè)備封裝:28-TSOP 包裝:帶卷 (TR) 其它名稱:71V256SA15PZGI8 |
| M25PE20-VMP6TP | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout |
| M25PE20-VMS6G | 制造商:Micron Technology Inc 功能描述: |
| M25PE20-VMW6G | 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Trays |
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