參數(shù)資料
型號: M25PE20-VMP6G
廠商: 意法半導體
元件分類: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門,串行閃存
文件頁數(shù): 24/60頁
文件大?。?/td> 310K
代理商: M25PE20-VMP6G
Instructions
M25PE20, M25PE10
24/60
6.2
Write Disable (WRDI)
The Write Disable (WRDI) instruction (
Figure 9
) resets the Write Enable Latch (WEL) bit.
The Write Disable (WRDI) instruction is entered by driving Chip Select (S) Low, sending the
instruction code, and then driving Chip Select (S) High.
The Write Enable Latch (WEL) bit is reset under the following conditions:
Power-up
Write Disable (WRDI) instruction completion
Page Write (PW) instruction completion
Page Program (PP) instruction completion
Write Status Register (WRSR) instruction completion
Write to Lock Register (WRLR) instruction completion
Page Erase (PE) instruction completion
SubSector Erase (SSE) instruction completion
Sector Erase (SE) instruction completion
Bulk Erase (BE) instruction completion
Figure 9.
Write Disable (WRDI) instruction sequence
C
D
AI03750D
S
Q
2
1
3
4
5
6
7
High Impedance
0
Instruction
相關PDF資料
PDF描述
M25PE20-VMP6P 4 Mbit Uniform Sector, Serial Flash Memory
M25PE20-VMP6TG 4 Mbit Uniform Sector, Serial Flash Memory
M25PE10-VMN6TG 4 Mbit Uniform Sector, Serial Flash Memory
M25PE10-VMN6TP 4 Mbit Uniform Sector, Serial Flash Memory
M25PE20 4 Mbit Uniform Sector, Serial Flash Memory
相關代理商/技術參數(shù)
參數(shù)描述
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