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參數(shù)資料
| 型號(hào)： | M25PE20 |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁(yè)數(shù)： | 17/37頁(yè) |
| 文件大?。?/td> | 198K |
| 代理商： | M25PE20 |
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M25PE10, M25PE20
Read Data Bytes at Higher Speed
(FAST_READ)
The device is first selected by driving Chip Select
(S) Low. The instruction code for the Read Data
Bytes at Higher Speed (FAST_READ) instruction
is followed by a 3-Byte address (A23-A0) and a
dummy Byte, each bit being latched-in during the
rising edge of Serial Clock (C). Then the memory
contents, at that address, is shifted out on Serial
Data Output (Q), each bit being shifted out, at a
maximum frequency f
C
, during the falling edge of
Serial Clock (C).
The instruction sequence is shown in
Figure 13.
The first Byte addressed can be at any location.
The address is automatically incremented to the
next higher address after each Byte of data is shift-
ed out. The whole memory can, therefore, be read
with a single Read Data Bytes at Higher Speed
(FAST_READ) instruction. When the highest ad-
dress is reached, the address counter rolls over to
000000h, allowing the read sequence to be contin-
ued indefinitely.
The Read Data Bytes at Higher Speed
(FAST_READ) instruction is terminated by driving
Chip Select (S) High. Chip Select (S) can be driv-
en High at any time during data output. Any Read
Data Bytes at Higher Speed (FAST_READ) in-
struction, while an Erase, Program or Write cycle
is in progress, is rejected without having any ef-
fects on the cycle that is in progress.
Figure 13. Read Data Bytes at Higher Speed (FAST_READ)
Instruction Sequence
and Data-Out Sequence
Note: Address bits A23 to A18 are Don’t Care in the M25PE20. Address bits A23 to A17 are Don’t Care in the M25PE10.
C
D
AI04006
S
Q
23
2
1
3
4
5
6
7
8
9 10
28 29 30 31
22 21
3
2
1
0
High Impedance
Instruction
24 BIT ADDRESS
0
C
D
S
Q
32 33 34
36 37 38 39 40 41 42 43 44 45 46
7
6
5
4
3
2
0
1
DATA OUT 1
Dummy Byte
MSB
7
6
5
4
3
2
1
0
DATA OUT 2
MSB
MSB
7
47
7
6
5
4
3
2
0
1
35
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M25PE16 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE16-VMP6G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE16-VMP6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE16-VMP6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE16-VMP6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25PE20_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout |
| M25PE20-V6D11 | 制造商:Micron Technology Inc 功能描述:SERIAL NOR 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Gel-pak, waffle pack, wafer, diced wafer on film |
| M25PE20-VMN6G | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout |
| M25PE20-VMN6P | 功能描述:閃存 1 AND 2 MBIT LV SERIAL FL RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M25PE20-VMN6P_NUD | 制造商:Micron Technology Inc 功能描述: |
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