- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377803 > M25PE20 (意法半導(dǎo)體) 4 Mbit Uniform Sector, Serial Flash Memory PDF資料下載
參數(shù)資料
| 型號： | M25PE20 |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 19/37頁 |
| 文件大?。?/td> | 198K |
| 代理商： | M25PE20 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁當(dāng)前第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁
19/37
M25PE10, M25PE20
Page Program (PP)
The Page Program (PP) instruction allows Bytes
to be programmed in the memory (changing bits
from 1 to 0, only). Before it can be accepted, a
Write Enable (WREN) instruction must previously
have been executed. After the Write Enable
(WREN) instruction has been decoded, the device
sets the Write Enable Latch (WEL).
The Page Program (PP) instruction is entered by
driving Chip Select (S) Low, followed by the in-
struction code, three address Bytes and at least
one data Byte on Serial Data Input (D). If the 8
least significant address bits (A7-A0) are not all
zero, all transmitted data exceeding the ad-
dressed page boundary roll over, and are pro-
grammed from the start address of the same page
(the one whose 8 least significant address bits
(A7-A0) are all zero). Chip Select (S) must be driv-
en Low for the entire duration of the sequence.
The instruction sequence is shown in
Figure 15.
If more than 256 Bytes are sent to the device, pre-
viously latched data are discarded and the last 256
data Bytes are guaranteed to be programmed cor-
rectly within the same page. If less than 256 Data
Bytes are sent to device, they are correctly pro-
grammed at the requested addresses without hav-
ing any effects on the other Bytes of the same
page.
For optimized timings, it is recommended to use
the Page Program (PP) instruction to program all
consecutive targeted Bytes in a single sequence
versus using several Page Program (PP) se-
quences with each containing only a few Bytes
(see
AC Characteristics (33MHz operation)
).
Chip Select (S) must be driven High after the
eighth bit of the last data Byte has been latched in,
otherwise the Page Program (PP) instruction is not
executed.
As soon as Chip Select (S) is driven High, the self-
timed Page Program cycle (whose duration is t
PP
)
is initiated. While the Page Program cycle is in
progress, the Status Register may be read to
check the value of the Write In Progress (WIP) bit.
The Write In Progress (WIP) bit is 1 during the self-
timed Page Program cycle, and is 0 when it is
completed. At some unspecified time before the
cycle is complete, the Write Enable Latch (WEL)
bit is reset.
A Page Program (PP) instruction applied to a page
that is Hardware Protected is not executed.
Any Page Program (PP) instruction, while an
Erase, Program or Write cycle is in progress, is re-
jected without having any effects on the cycle that
is in progress.
Figure 15. Page Program (PP) Instruction Sequence
Note: 1. Address bits A23 to A18 are Don’t Care in the M25PE20. Address bits A23 to A17 are Don’t Care in the M25PE10.
2. 1
≤
n
≤
256
C
D
AI04044
S
42
41
43 44 45 46 47 48 49 50
52 53 54 55
40
C
D
S
23
2
1
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35
22 21
3
2
1
0
36 37 38
Instruction
24-Bit Address
0
7
6
5
4
3
2
0
1
Data Byte 1
39
51
7
6
5
4
3
2
0
1
Data Byte 2
7
6
5
4
3
2
0
1
Data Byte 3
Data Byte n
7
6
5
4
3
2
0
1
MSB
MSB
MSB
MSB
MSB
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M25PE16 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE16-VMP6G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE16-VMP6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE16-VMP6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE16-VMP6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25PE20_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout |
| M25PE20-V6D11 | 制造商:Micron Technology Inc 功能描述:SERIAL NOR 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Gel-pak, waffle pack, wafer, diced wafer on film |
| M25PE20-VMN6G | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout |
| M25PE20-VMN6P | 功能描述:閃存 1 AND 2 MBIT LV SERIAL FL RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M25PE20-VMN6P_NUD | 制造商:Micron Technology Inc 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。