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參數(shù)資料
| 型號： | M25PE20 |
| 廠商： | 意法半導體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 28/37頁 |
| 文件大小： | 198K |
| 代理商： | M25PE20 |
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M25PE10, M25PE20
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Table 13. AC Characteristics (25MHz operation)
Note: 1. t
CH
+ t
CL
must be greater than or equal to 1/ f
C
2. Value guaranteed by characterization, not 100% tested in production.
3. When using PP and PW instructions to update consecutive Bytes, optimized timings are obtained with one sequence including all
the Bytes versus several sequences of only a few Bytes. (1
≤
n
≤
256)
Test conditions specified in
Table 9.
and
Table 10.
Symbol
Alt.
Parameter
Min.
Typ.
Max.
Unit
f
C
f
C
Clock Frequency for the following
instructions: FAST_READ, PW, PP,
PE, SE, DP, RDP, WREN, WRDI,
RDSR
D.C.
25
MHz
f
R
Clock Frequency for READ
instructions
D.C.
20
MHz
t
CH (1)
t
CLH
Clock High Time
18
ns
t
CL (1)
t
CLL
Clock Low Time
18
ns
Clock Slew Rate
2
(peak to peak)
0.1
V/ns
t
SLCH
t
CSS
S Active Setup Time (relative to C)
10
ns
t
CHSL
S Not Active Hold Time (relative to C)
10
ns
t
DVCH
t
DSU
Data In Setup Time
5
ns
t
CHDX
t
DH
Data In Hold Time
5
ns
t
CHSH
S Active Hold Time (relative to C)
10
ns
t
SHCH
S Not Active Setup Time (relative to C)
10
ns
t
SHSL
t
CSH
S Deselect Time
200
ns
t
SHQZ (2)
t
DIS
Output Disable Time
15
ns
t
CLQV
t
V
Clock Low to Output Valid
15
ns
t
CLQX
t
HO
Output Hold Time
0
ns
t
THSL
Top Sector Lock Setup Time
50
ns
t
SHTL
Top Sector Lock Hold Time
100
ns
t
DP (2)
S to Deep Power-down
3
μ
s
t
RDP (2)
S High to Standby Power Mode
30
μ
s
t
PW (3)
Page Write Cycle Time (256 Bytes)
11
25
ms
Page Write Cycle Time (n Bytes)
10.2 +
n*0.8/256
t
PP (3)
Page Program Cycle Time (256 Bytes)
1.2
5
ms
Page Program Cycle Time (n Bytes)
0.4 +
n*0.8/256
t
PE
Page Erase Cycle Time
10
20
ms
t
SE
Sector Erase Cycle Time
1
5
s
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25PE20_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout |
| M25PE20-V6D11 | 制造商:Micron Technology Inc 功能描述:SERIAL NOR 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Gel-pak, waffle pack, wafer, diced wafer on film |
| M25PE20-VMN6G | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout |
| M25PE20-VMN6P | 功能描述:閃存 1 AND 2 MBIT LV SERIAL FL RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M25PE20-VMN6P_NUD | 制造商:Micron Technology Inc 功能描述: |
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