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參數(shù)資料
| 型號： | M25PE80-VMP6 |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 21/43頁 |
| 文件大?。?/td> | 599K |
| 代理商： | M25PE80-VMP6 |
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M25PE80
Page Write (PW)
The Page Write (PW) instruction allows Bytes to
be written in the memory. Before it can be accept-
ed, a Write Enable (WREN) instruction must previ-
ously have been executed. After the Write Enable
(WREN) instruction has been decoded, the device
sets the Write Enable Latch (WEL).
The Page Write (PW) instruction is entered by
driving Chip Select (S) Low, followed by the in-
struction code, three address Bytes and at least
one data Byte on Serial Data Input (D). The rest of
the page remains unchanged if no power failure
occurs during this write cycle.
The Page Write (PW) instruction performs a page
erase cycle even if only one Byte is updated.
If the 8 least significant address bits (A7-A0) are
not all zero, all transmitted data exceeding the ad-
dressed page boundary roll over, and are written
from the start address of the same page (the one
whose 8 least significant address bits (A7-A0) are
all zero). Chip Select (S) must be driven Low for
the entire duration of the sequence.
The instruction sequence is shown in
Figure 15.
If more than 256 Bytes are sent to the device, pre-
viously latched data are discarded and the last 256
data Bytes are guaranteed to be written correctly
within the same page. If less than 256 Data Bytes
are sent to device, they are correctly written at the
requested addresses without having any effects
on the other Bytes of the same page.
For optimized timings, it is recommended to use
the Page Write (PW) instruction to write all con-
secutive targeted Bytes in a single sequence ver-
sus using several Page Write (PW) sequences
with each containing only a few Bytes
Chip Select (S) must be driven High after the
eighth bit of the last data Byte has been latched in,
otherwise the Page Write (PW) instruction is not
executed.
As soon as Chip Select (S) is driven High, the self-
timed Page Write cycle (whose duration is t
PW
) is
initiated. While the Page Write cycle is in progress,
the Status Register may be read to check the val-
ue of the Write In Progress (WIP) bit. The Write In
Progress (WIP) bit is 1 during the self-timed Page
Write cycle, and is 0 when it is completed. At some
unspecified time before the cycle is complete, the
Write Enable Latch (WEL) bit is reset.
A Page Write (PW) instruction applied to a page
that is Hardware or Software Protected is not exe-
cuted.
Any Page Write (PW) instruction, while an Erase,
Program or Write cycle is in progress, is rejected
without having any effects on the cycle that is in
progress.
Figure 15. Page Write (PW) Instruction Sequence
Note: 1. Address bits A23 to A19 are Don’t Care
2. 1
≤
n
≤
256
C
D
AI04045
S
42
41
43 44 45 46 47 48 49 50
52 53 54 55
40
C
D
S
23
2
1
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35
22 21
3
2
1
0
36 37 38
Instruction
24-Bit Address
0
7
6
5
4
3
2
0
1
Data Byte 1
39
51
7
6
5
4
3
2
0
1
Data Byte 2
7
6
5
4
3
2
0
1
Data Byte 3
Data Byte n
7
6
5
4
3
2
0
1
MSB
MSB
MSB
MSB
MSB
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M25PE80-VMW6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE80-VMW6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE80-VMW6T | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE80-VMW6P | COIL CHOKE 27MH .50A RADIAL |
| M25PE80-VMW6G | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25PE80-VMP6G | 功能描述:閃存 8 Mbit Lo Vltg Page Erasable Seral 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M25PE80-VMP6P | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout |
| M25PE80-VMP6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory with Byte-Alterability, 50MHz SPI Bus, Standard Pin-out |
| M25PE80-VMP6TG | 功能描述:閃存 SERIAL PAGE ERASE FLASH 8 Mbit Datas RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M25PE80-VMP6TP | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout |
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